| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector |
| Hao Wen(文豪), Li Xiong(熊力), Congbing Tan(谭丛兵)‡, Kaimin Zhu(朱凯民), Yong Tang(唐勇), Jinbin Wang(王金斌)§, and Xiangli Zhong(钟向丽)¶ |
| School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China |
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Abstract Due to their excellent carrier mobility, high absorption coefficient and narrow bandgap, most 2D IVA metal chalcogenide semiconductors (GIVMCs, metal = Ge, Sn, Pb；chalcogen = S, Se) are regarded as promising candidates for realizing high-performance photodetectors. We synthesized high-quality two-dimensional (2D) tin sulfide (SnS) nanosheets using the physical vapor deposition (PVD) method and fabricated a 2D SnS visible-light photodetector. The photodetector exhibits a high photoresponsivity of 161 A·W-1 and possesses an external quantum efficiency of 4.45×104%, as well as a detectivity of 1.15×109 Jones under 450 nm blue light illumination. Moreover, under poor illumination at optical densities down to 2 mW·cm-2, the responsivity of the device is higher than that at stronger optical densities. We suggest that a photogating effect in the 2D SnS photodetector is mainly responsible for its low-light responsivity. Defects and impurities in 2D SnS can trap carriers and form localized electric fields, which can delay the recombination process of electron-hole pairs, prolong carrier lifetimes, and thus improve the low-light responsivity. This work provides design strategies for detecting low levels of light using photodetectors made of 2D materials.
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Received: 10 October 2020
Revised: 29 November 2020
Accepted manuscript online: 04 January 2021
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PACS:
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 1872251 and 11875229). |
Corresponding Authors:
Congbing Tan, Jinbin Wang, Xiangli Zhong
E-mail: cbtan@xtu.edu.cn;jbwang@xtu.edu.cn;xlzhong@xtu.edu.cn
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Cite this article:
Hao Wen(文豪), Li Xiong(熊力), Congbing Tan(谭丛兵), Kaimin Zhu(朱凯民), Yong Tang(唐勇), Jinbin Wang(王金斌), and Xiangli Zhong(钟向丽) Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector 2021 Chin. Phys. B 30 057803
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