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Chin. Phys. B, 2021, Vol. 30(3): 037801    DOI: 10.1088/1674-1056/abd168

Plasmonic properties of graphene on uniaxially anisotropic substrates

Shengchuan Wang(汪圣川), Bin You(游斌), Rui Zhang(张锐), Kui Han(韩奎), Xiaopeng Shen(沈晓鹏)†, and Weihua Wang(王伟华)‡
1 School of Materials and Physics, China University of Mining and Technology, Xuzhou 221116, China
Abstract  Most of the current graphene plasmonic researches are based on the substrates with isotropic dielectric constant such as silicon. In this work, we investigate optical properties of graphene nanoribbon arrays placed on a uniaxially anisotropic substrate, where the anisotropy provides an additional freedom to tune the behaviors of graphene plasmons, and its effect can be described by a simple effective formula. In practice, the substrates of semi-infinite and finite thickness are discussed by using both the formula and full wave simulations. Particularly, the dielectric constants $\varepsilon_ \parallel $ and $\varepsilon_ \bot $ approaching zero are intensively studied, which show different impacts on the transverse magnetic (TM) surface modes. In reality, the hexagonal boron nitride (hBN) can be chosen as the anisotropic substrate, which is also a hyperbolic material in nature.
Keywords:  graphene      plasmonics      anisotropy      hexagonal boron nitride  
Published:  22 February 2021
PACS:  78.68.Wj  
  73.20.Mf (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))  
  42.25.Gy (Edge and boundary effects; reflection and refraction)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11604382 and 11574140) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20160236).
Corresponding Authors:  Corresponding author. E-mail: Corresponding author. E-mail:   

Cite this article: 

Shengchuan Wang(汪圣川), Bin You(游斌), Rui Zhang(张锐), Kui Han(韩奎), Xiaopeng Shen(沈晓鹏, and Weihua Wang(王伟华) Plasmonic properties of graphene on uniaxially anisotropic substrates 2021 Chin. Phys. B 30 037801

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