Chin. Phys. B, 2021, Vol. 30(1): 016301    DOI: 10.1088/1674-1056/abc7a7
 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next

# Raman scattering from highly-stressed anvil diamond

Shan Liu(刘珊)1, Qiqi Tang(唐琦琪)1, Binbin Wu(吴彬彬)1, Feng Zhang(张峰)1, Jingyi Liu(刘静仪)1, Chunmei Fan(范春梅)1, and Li Lei(雷力)1,2,
1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China; 2 Key Laboratory of High Energy Density Physics and Technology (Ministry of Education), Sichuan University, Chengdu 610065, China
Abstract  The high-frequency edge of the first-order Raman mode of diamond reflects the stress state at the culet of anvil, and is often used for the pressure calibration in diamond anvil cell (DAC) experiments. Here we point out that the high-frequency edge of the diamond Raman phonon corresponds to the Brillouin zone (BZ) center $$\varGamma$$ point as a function of pressure. The diamond Raman pressure gauge relies on the stability of crystal lattice of diamond under high stress. Upon the diamond anvil occurs failure under the uniaxial stress (197 GPa), the loss of intensity of the first-order Raman phonon and a stress-dependent broad Raman band centered at 600 cm - 1 are observed, which is associated with a strain-induced local mode corresponding to the BZ edge phonon of the L1 transverse acoustic phonon branch.
Keywords:  diamond anvil cell      Raman scattering      pressure calibration      Brillouin zone
Revised:  21 October 2020      Published:  30 December 2020
 PACS: 63.20.-e (Phonons in crystal lattices) 63.50.-x (Vibrational states in disordered systems) 78.30.-j (Infrared and Raman spectra)
Fund: Project support by the National Natural Science Foundation of China (Grant No. 11774247).
Corresponding Authors:  Corresponding author. E-mail: lei@scu.edu.cn