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Chin. Phys. B, 2021, Vol. 30(1): 016103    DOI: 10.1088/1674-1056/abc548
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

TiOx-based self-rectifying memory device for crossbar WORM memory array applications

Li-Ping Fu(傅丽萍)1,2, Xiao-Qiang Song(宋小强)1,2, Xiao-Ping Gao(高晓平)3,†, Ze-Wei Wu(吴泽伟)2, Si-Kai Chen(陈思凯)2, and Ying-Tao Li(李颖弢)1,2,
1 Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, Lanzhou 730000, China; 2 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; 3 Key Laboratory of Sensor and Sensing Technology, Gansu Province, Lanzhou 730000, China
Abstract  Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiOx/W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 104 at 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiOx/W interface and the Schottky contact at Pt/TiOx interface. The results in this paper demonstrate the potential application of TiOx-based WORM memory device in crossbar arrays.
Keywords:  resistive switching memory      write-once-read-many-times (WORM)      self-rectifying      crossbar array  
Received:  02 October 2020      Revised:  26 October 2020      Accepted manuscript online:  28 October 2020
PACS:  61.72.jd (Vacancies)  
  68.60.-p (Physical properties of thin films, nonelectronic)  
  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
  73.40.Rw (Metal-insulator-metal structures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61774079 and 61664001), the Science and Technology Plan of Gansu Province, China (Grant No. 20JR5RA307), and the Key Research and Development Program of Gansu Province, China (Grant No. 18YF1GA088).
Corresponding Authors:  Corresponding author. E-mail: xp.gao@gsas.ac.cn Corresponding author. E-mail: li_yt06@lzu.edu.cn   

Cite this article: 

Li-Ping Fu(傅丽萍), Xiao-Qiang Song(宋小强), Xiao-Ping Gao(高晓平), Ze-Wei Wu(吴泽伟), Si-Kai Chen(陈思凯), and Ying-Tao Li(李颖弢) TiOx-based self-rectifying memory device for crossbar WORM memory array applications 2021 Chin. Phys. B 30 016103

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