Please wait a minute...
Chin. Phys. B, 2021, Vol. 30(1): 018502    DOI: 10.1088/1674-1056/abc53f
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

Cui Yang(杨翠)1, Guo-Liang Peng(彭国良)1, Wei Mao(毛维)2,†, Xue-Feng Zheng(郑雪峰)2, Chong Wang(王冲)2, Jin-Cheng Zhang(张进成)2, and Yue Hao(郝跃)2
1 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China; 2 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  A novel CMOS image sensor (CIS) pinned photodiode (PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate (OG) and the temporary storage diffusing (TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node (FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications.
Keywords:  CMOS image sensor      charge transfer efficiency      high-speed charge transfer      pinned photodiode  
Received:  12 August 2020      Revised:  09 October 2020      Accepted manuscript online:  28 October 2020
PACS:  85.30.-z (Semiconductor devices)  
  95.55.Aq (Charge-coupled devices, image detectors, and IR detector arrays)  
  07.07.Df (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61574112).
Corresponding Authors:  Corresponding author. E-mail: mwxidian@126.com   

Cite this article: 

Cui Yang(杨翠), Guo-Liang Peng(彭国良), Wei Mao(毛维), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node 2021 Chin. Phys. B 30 018502

1 Eric R F and Donald B H 2014 IEEE J. Electron. Device Soc. 2 33
2 Bernhard B, Felix L and Peter S 2006 IEEE Tran. Electron. Device 53 2743
3 Hiroaki T, Tomonari S, Tetsuya L, Keita Y and Shoji K 2010 SPIE Electron. Imaging 7536 75360R-4
4 Terrence C M, Navid S, Nikola K, Kyros K and Roman G 2017 IEEE Tran. Electron. Device 64 2246
5 Seunghyun L, Dahwan P, Sanguk L, Jaehyuk C and Seong J K 2019 IEEE Access J. 7 130453
6 Serena R, Vincent G, Magali E, Philippe P, Claude M, Clémentine D and Pierre M 2018 IEEE Tran. Nucl. Sci. 65 86
7 Donald B H and Eric R F 2018 IEEE J. Electron. Device Soc. 6 413
8 Alice P, Vincent G, Aziouz C, Pierre M, Cedric V, Olivier S and Michel B D B 2015 IEEE 2015 45th European Solid State Device Research Conference (ESSDERC), Graz, 2015 pp. 156-159
9 Fabio A, Manuel M G, Gözen K, Radoslaw M G, Bernhard B, Alice B, Daniel F and David S 2018 IEEE J. Electron. Device Soc. 6 370
10 Bhumjae S, Sangsik P and Hyuntaek S 2010 Solid-State Electron. 54 1418
11 Lioe, DeXing, Mars, Kamel, Takasawa, Taishi, Yasutomi, Keita, Kagawa and Keiichiro 2016 SPIE BiOS, 2016 San Francisco, California, United States 9720 97200J-3
12 Yangfan Z, Zhongxiang C, Quanliang L, Qi Q and Nanjian W 2011 Int. Symp. Photoelectronic Detect. Imaging 2011 Beijing, China 8194 819435-3
13 Xiangliang J, Weihui L, Hongjiao Y, Lizhen T and Jia Y 2014 Sel. Proc. Photoelectronic Technol. Committee Conferences 9521 95210B-4
14 Daniel D, Andreas S, Rana M, Werner B, Holger V, Anton G and Bedrich J H 2010 Nucl. Instrum. Methods Phys. Res. A 624 471
15 Walter F K, Guang Y, Chao Y, Rakesh K K, Xie L S, John L, Vincent M, Frank V and Vipulkumar P 1996 IEEE Int. Solid-State Circuits Conf. 183
16 Kundu T, Jarwal P K and Misra D 2002 32nd European Solid-State Device Research Conference pp. 651-654
17 Cao Z X, Zhou Y F, Li Q L, Qin Q and Wu N J 2013 SPIE 8908 89082G-3
18 Han S M, Taishi T, Keita Y, Satoshi A, Keiichiro K and Shoji K 2015 IEEE J. Electron. Device Soc. 3 268
[1] Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution
Yu Zhang(张钰), Xinmiao Lu(逯鑫淼), Guangyi Wang(王光义), Yongcai Hu(胡永才), Jiangtao Xu(徐江涛). Chin. Phys. B, 2016, 25(7): 070503.
[2] A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure
Cao Chen, Zhang Bing, Wu Long-Sheng, Li Na, Wang Jun-Feng. Chin. Phys. B, 2014, 23(12): 124215.
[3] A nano-metallic-particles-based CMOS image sensor for DNA detection
He Jin, Su Yan-Mei, Ma Yu-Tao, Chen Qin, Wang Ruo-Nan, Ye Yun, Ma Yong, Liang Hai-Lang. Chin. Phys. B, 2012, 21(7): 076104.
No Suggested Reading articles found!