Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor

doi:10.1088/1674-1056/abc163

Abstract Emulation of synaptic function by ionic/electronic hybrid device is crucial for brain-like computing and neuromorphic systems. Electric-double-layer (EDL) transistors with proton conducting electrolytes as the gate dielectrics provide a prospective approach for such application. Here, artificial synapses based on indium-tungsten-oxide (IWO)-based EDL transistors are proposed, and some important synaptic functions (excitatory post-synaptic current, paired-pulse facilitation, filtering) are emulated. Two types of spike-timing-dependent plasticity (Hebbian STDP and anti-Hebbian STDP) learning rules and multistore memory (sensory memory, short-term memory, and long-term memory) are also mimicked. At last, classical conditioning is successfully demonstrated. Our results indicate that IWO-based neuromorphic transistors are interesting for neuromorphic applications.

Keywords: neuromorphic transistors synaptic plasticity oxide-based semiconductors classical conditioning

Received: 24 August 2020
Revised: 30 September 2020
Accepted manuscript online: 15 October 2020

PACS:	81.05.Gc	(Amorphous semiconductors)
	85.30.Tv	(Field effect devices)
	87.19.lg	(Synapses: chemical and electrical (gap junctions))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11674162 and 61834001) and the National Key R&D Program of China (Grant Nos. 2018YFA0305800 and 2019YFB2205400).

Corresponding Authors: Qing Wan
E-mail: wanqing@nju.edu.cn

Cite this article:

Rui Liu(刘锐), Yongli He(何勇礼), Shanshan Jiang(姜珊珊), Li Zhu(朱力), Chunsheng Chen(陈春生), Ying Zhu(祝影), and Qing Wan(万青) Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor 2021 Chin. Phys. B 30 058102

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Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor

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