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Chin. Phys. B, 2021, Vol. 30(2): 027303    DOI: 10.1088/1674-1056/abbbf7

Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation

Jin-Jin Tang(汤金金)1, Gui-Peng Liu(刘贵鹏)1,2,†, Jia-Yu Song(宋家毓)1, Gui-Juan Zhao(赵桂娟)1, and Jian-Hong Yang(杨建红)1
1 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; 2 National & Local Joint Engineering Laboratory of Light-conversion Materials and Technology, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
Abstract  Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) that work in aerospace are exposed to particles radiation, which can cause the degradation in electrical performance. We investigate the effect of proton irradiation on the concentration of two-dimensional electron gas (2DEG) in GaN-based HEMTs. Coupled Schrödinger's and Poisson's equations are solved to calculate the band structure and the concentration of 2DEG by the self-consistency method, in which the vacancies caused by proton irradiation are taken into account. Proton irradiation simulation for GaN-based HEMT is carried out using the stopping and range of ions in matter (SRIM) simulation software, after which a theoretical model is established to analyze how proton irradiation affects the concentration of 2DEG. Irradiated by protons with high fluence and low energy, a large number of Ga vacancies appear inside the device. The results indicate that the ionized Ga vacancies in the GaN cap layer and the AlGaN layer will affect the Fermi level, while the Ga vacancies in the GaN layer will trap the two-dimensional electrons in the potential well. Proton irradiation significantly reduced the concentration of 2DEG by the combined effect of these two mechanisms.
Keywords:  proton irradiation      GaN-based HEMT      two-dimensional electron concentration  
Published:  18 January 2021
PACS:  73.61.Ey (III-V semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  14.20.Dh (Protons and neutrons)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61874108), the Gansu Province Natural Science Foundation, China (Grant Nos. 18JR3RA285 and 20JR5RA287), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. lzujbky-2020-kb06 and lzujbky-2020-cd02).
Corresponding Authors:  Corresponding author. E-mail:   

Cite this article: 

Jin-Jin Tang(汤金金), Gui-Peng Liu(刘贵鹏), Jia-Yu Song(宋家毓), Gui-Juan Zhao(赵桂娟), and Jian-Hong Yang(杨建红) Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation 2021 Chin. Phys. B 30 027303

1 Stassinopoulos E G and Raymond J P 1988 Proc. IEEE 76 1423
2 Sonia G, Richter E, Lossy R, Mai M, Schmidt J, Weyers M, Tr\"ankle G, Denker A, Opitz-Coutureau J, Pensl G, Brauer I and Strunk H P 2006 Phys. Status Solidi 3 2338
3 Tang J, Liu G, Zhao G, Xing S and Malik S A 2020 J. Vac. Sci. Technol. B 38 023202
4 Kim D S, Lee J H, Kim J Get al. 2020 ECS Journal of Solid State Science and Technology
5 Lv L, Ma J G, Cao Y Ret al. 2011 Microelectron. Reliability 51 2168
6 Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D, Stubbins J and Adesida I 2004 Solid State Electron. 48 471
7 Pearton S J, Ren F, Patrick E, Law M E and Polyakov A Y 2016 ECS J. Solid State Sci. Technol. 5 Q35
8 Sun X, Saadat O I, Chen J, Zhang E X, Cui S, Palacios T, Fleetwood D M and Ma T P 2013 IEEE Trans. Nucl. Sci. 60 4074
9 Jenkins D W, Dow J D and Tsai M 1992 J. Appl. Phys. 72 4130
10 Hu X, Choi B K, Barnaby H J, Fleetwood D M, Schrimpf R D, Lee S, Shojah-Ardalan S, Wilkins R, Mishra U K and Dettmer R W 2004 IEEE Trans. Nucl. Sci. 51 293
11 Serra A M C and Santos H A 1991 J. Appl. Phys. 70 2734
12 Ziegler J F, Ziegler M D and Biersack J P 2010 Nucl. Instrum. Methods Phys. Res. Sect. B: Beam Interact. Mater. Atoms 268 1818
13 Gonschorek M, Carlin J F, Feltin Eet al. 2008 J. Appl. Phys. 103 093714
14 Martin G, Strite S, Botchkarev A, Agarwal A, Rockett A, Morko\cc H, Lambrecht W R L and Segall B 1994 Appl. Phys. Lett. 65 610
15 Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222
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