A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications

doi:10.1088/1674-1056/abaee5

Abstract A novel p-GaN gate GaN high-electron-mobility transistor (HEMT) with an AlGaN buffer layer and hybrid dielectric zone (H-HEMT) is proposed. The hybrid dielectric zone is located in the buffer and composed of horizontal arranged HfO₂ zone and SiN_x zone. The proposed H-HEMT is numerically simulated and optimized by the Silvaco TCAD tools (ATLAS), and the DC, breakdown, C-V and switching properties of the proposed device are characterized. The breakdown voltage of the proposed HEMT is significantly improved with the introduction of the hybrid dielectric zone, which can effectively modulate the electric field distribution in the GaN channel and the buffer. High breakdown voltage of 1490 V, low specific on-state resistance of 0.45 mΩ cm² and high Baliga's figure of merit (FOM) of 5.3 GW/cm², small R_onQ_oss of 212 mΩ nC, high turn-on speed 627 V/ns and high turn-off speed 87 V/ns are obtained at the same time with the gate-to-drain distance L_gd of 6 μ m.

Keywords: GaN HEMT breakdown voltage high-permittivity dielectric low-permittivity dielectric

Received: 11 June 2020
Revised: 21 July 2020
Accepted manuscript online: 13 August 2020

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)
	77.22.Ch	(Permittivity (dielectric function))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61376078).

Corresponding Authors: ^†Corresponding author. E-mail: jfdu@uestc.edu.cn

Cite this article:

Yong Liu(刘勇), Qi Yu(于奇), and Jiang-Feng Du(杜江锋) A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications 2020 Chin. Phys. B 29 127701

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A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications

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