Thermal tunable one-dimensional photonic crystals containing phase change material

doi:10.1088/1674-1056/abab78

Abstract

To obtain the adjustable photonic crystals (PCs), we numerically investigate one-dimensional (1D) PCs with alternating VO₂ and SiO₂ layers through transfer matrix method. The dispersion relation agrees well with the transmittance obtained by the finite element calculation. Tunable band gaps are achieved with the thermal stimuli of VO₂, which has two crystal structures. The monoclinic crystal structure VO₂ (R) at low temperature exhibits insulating property, and the high temperature square rutile structure VO₂ (M) presents metal state. Concretely, the bandwidth is getting narrower and red shift occurs with the higher temperature in VO₂ (R)/SiO₂ PCs structure. Based on the phase change characteristics of VO₂, we can flexibly adjust the original structure as VO₂ (R)/VO₂ (M)/SiO₂. By increasing the phase ratio of VO₂ (R) to VO₂ (M), the band gap width gradually becomes wider and blue shift occurs. The discrete layers of gradient composites on the dispersion of 1D PCs are also investigated, which enhances the feasibility in practical operation. Thus, our proposed thermal modulation PCs structure paves a new way to realize thermal tunable optical filters and sensors.

Keywords: photonic crystals VO₂ thermal modulation phase change

Received: 10 May 2020
Revised: 05 June 2020
Accepted manuscript online: 01 August 2020

PACS:	42.70.Qs	(Photonic bandgap materials)
	42.25.Bs	(Wave propagation, transmission and absorption)
	81.30.Dz	(Phase diagrams of other materials)
	42.79.Ci	(Filters, zone plates, and polarizers)

Corresponding Authors: ^†Corresponding author. E-mail: chunzhen@zzu.edu.cn

About author:

†Corresponding author. E-mail: chunzhen@zzu.edu.cn

* Project supported by the Key Science and Technology Research Project of Henan Province, China (Grant No. 1721023100107).

Cite this article:

Yuanlin Jia(贾渊琳), Peiwen Ren(任佩雯), and Chunzhen Fan(范春珍)† Thermal tunable one-dimensional photonic crystals containing phase change material 2020 Chin. Phys. B 29 104210

Fig. 1.

Real part of the effective dielectric constant of VO₂ at different temperature in THz region.

Fig. 2.

The 3D configuration and the cross section view of the VO₂ (R)/SiO₂ PCs structure.

Fig. 3.

(a) The dispersion relation of VO₂ (R)/SiO₂ PCs structure obtained with transfer matrix method. (b) The transmission spectrum of the structure obtained with numerical simulation.

Fig. 4.

The influence of temperature on the dispersion relation of VO₂ (R)/SiO₂ PCs in the range of 0–125 THz.

Fig. 5.

(a) The 3D configuration and cross section view of the VO₂ (R)/VO₂ (M)/SiO₂ PCs structure. (b) The dispersion curve obtained with transfer matrix method. (c) The transmission spectrum of VO₂ (R)/VO₂ (M)/SiO₂ PCs structure obtained with numerical calculation.

Fig. 6.

(a) and (c) The influence of different proportions of VO₂ (R) and VO₂ (M), a₁/a₂, on the dispersion relation. (b) and (d) The position and band gap of the first band with different a₁/a₂.

Fig. 7.

(a) and (b) The position and band gap of the second band with different a₁/a₂. (c) and (d) The position and band gap of the third band with different a₁/a₂.

Fig. 8.

(a) The dispersion curve of 1D PCs with different number of layers. (b) The position and the first band width with different layers of VO₂.

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