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Chin. Phys. B, 2020, Vol. 29(9): 098503    DOI: 10.1088/1674-1056/aba611
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Room-temperature electric control of exchange bias effect in CoO1-δ/Co films using Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) substrates

Xin Wen(闻馨)1, Rui Wu(吴锐)1, Wen-Yun Yang(杨文云)1,2,3, Chang-Sheng Wang(王常生)1,2,3, Shun-Quan Liu(刘顺荃)1,2,3, Jing-Zhi Han(韩景智)1,2,3, Jin-Bo Yang(杨金波)1,2,3
1 State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China;
2 Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Abstract  Significant electric control of exchange bias effect in a simple CoO1-δ/Co system, grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) (PMN-PT) substrates, is achieved at room temperature. Obvious changes in both the coercivity field (HC) and the exchange bias field (HE), of 31% and 5%, respectively, have been observed when the electric field is applied to the substrate. While the change of coercivity is related to the enhanced uniaxial anisotropy in the ferromagnetic layer, the change of the exchange bias field can only originate from the spin reorientation in the antiferromagnetic CoO1-δ layer caused by the strain-induced magnetoelastic effect. A large HE/HC > 2, and HE~ 110 Oe at room temperature, as well as the low-energy fabrication of this system, make it a practical system for spintronic device applications.
Keywords:  electric control      exchange bias      PMN-PT      magnetic anisotropy  
Received:  08 June 2020      Revised:  03 July 2020      Accepted manuscript online:  15 July 2020
PACS:  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
  85.75.Dd (Magnetic memory using magnetic tunnel junctions)  
  75.50.-y (Studies of specific magnetic materials)  
  75.30.Gw (Magnetic anisotropy)  
Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206303 and 2017YFA020630) and the National Natural Science Foundation of China (Grant Nos. 11975035 and 51731001).
Corresponding Authors:  Rui Wu     E-mail:  wurui2010@pku.edu.cn

Cite this article: 

Xin Wen(闻馨), Rui Wu(吴锐), Wen-Yun Yang(杨文云), Chang-Sheng Wang(王常生), Shun-Quan Liu(刘顺荃), Jing-Zhi Han(韩景智), Jin-Bo Yang(杨金波) Room-temperature electric control of exchange bias effect in CoO1-δ/Co films using Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) substrates 2020 Chin. Phys. B 29 098503

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