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Chin. Phys. B, 2020, Vol. 29(9): 098101    DOI: 10.1088/1674-1056/aba60c
Special Issue: SPECIAL TOPIC — Physics in neuromorphic devices
SPECIAL TOPIC—Physics in neuromorphic devices Prev   Next  

A synaptic transistor with NdNiO3

Xiang Wang(汪翔)1,2, Chen Ge(葛琛)1,2, Ge Li(李格)1, Er-Jia Guo(郭尔佳)1, Meng He(何萌)1, Can Wang(王灿)1,2,3, Guo-Zhen Yang(杨国桢)1, Kui-Juan Jin(金奎娟)1,2,3
1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China
Abstract  Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating. The non-volatile conductance change reached 104 under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO3 artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.
Keywords:  pulsed laser deposition      synaptic transistor      electrolyte gating      artificial synapse      NdNiO3     
Received:  09 May 2020      Published:  05 September 2020
PACS:  81.15.Fg (Pulsed laser ablation deposition)  
  84.35.+i (Neural networks)  
  85.30.Tv (Field effect devices)  
  87.19.L- (Neuroscience)  
Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0303604 and 2019YFA0308500), the National Natural Science Foundation of China (Grant Nos. 11674385, 11404380, 11721404, and 11874412), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2018008), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDJSSW-SLH020).
Corresponding Authors:  Chen Ge, Kui-Juan Jin     E-mail:  gechen@iphy.ac.cn;kjjin@iphy.ac.cn

Cite this article: 

Xiang Wang(汪翔), Chen Ge(葛琛), Ge Li(李格), Er-Jia Guo(郭尔佳), Meng He(何萌), Can Wang(王灿), Guo-Zhen Yang(杨国桢), Kui-Juan Jin(金奎娟) A synaptic transistor with NdNiO3 2020 Chin. Phys. B 29 098101

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