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Chin. Phys. B, 2020, Vol. 29(10): 107501    DOI: 10.1088/1674-1056/ab99ac
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE

Shan Li(黎姗)1,2, Jun Lu(鲁军)1,3,†, Si-Wei Mao(毛思玮)1,2, Da-Hai Wei(魏大海)1,2,3, and Jian-Hua Zhao(赵建华)1,2,3
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
3 Beijing Academy of Quantum Information Science, Beijing 100193, China
Abstract  

A synthetic antiferromagnet based on a thin antiferromagnetically coupled Co2MnSi/MnGa bilayer with Pt capping is proposed in this work. Square magnetic loops measured by anomalous Hall effect reveal that a well perpendicular magnetic anisotropy is obtained in this structure. A very large coercivity of 83 kOe (1 Oe = 79.5775 A⋅m−1) is observed near the magnetic moment compensation point of 270 K, indicating an antiferromagnetic behavior. Moreover, the anomalous Hall signal does not go to zero even at the magnetic compensation point, for which the difficulty in detecting the conventional antiferromagnets can be overcome. By changing the temperature, the polarity of the spin–orbit torque induced switching is changed around the bilayer compensation point. This kind of thin bilayer has potential applications in spin–orbit-related effects, spintronic devices, and racetrack memories.

Keywords:  exchange coupling      magnetization compensation      anomalous Hall effect      molecular-beam epitaxy  
Received:  14 February 2020      Revised:  26 May 2020      Published:  05 October 2020
PACS:  75.30.Et (Exchange and superexchange interactions)  
  75.70.Ak (Magnetic properties of monolayers and thin films)  
  73.50.Jt (Galvanomagnetic and other magnetotransport effects)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
Corresponding Authors:  Corresponding author. E-mail: lujun@semi.ac.cn   
About author: 
†Corresponding author. E-mail: lujun@semi.ac.cn
* Project supported by the National Program on Key Basic Research Project, China (Grant No. 2018YFB0407601), the Key Research Project of Frontier Science of the Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC015 and XDPB12), and the National Natural Science Foundation of China (Grant Nos. 11874349 and 11774339).

Cite this article: 

Shan Li(黎姗), Jun Lu(鲁军)†, Si-Wei Mao(毛思玮), Da-Hai Wei(魏大海), and Jian-Hua Zhao(赵建华) Magnetic characterization of a thin Co2MnSi/L10–MnGa synthetic antiferromagnetic bilayer prepared by MBE 2020 Chin. Phys. B 29 107501

Fig. 1.  

(a) Schematic diagram of sample structure, (b) microscope photograph of Hall bar device (120 μm × 10 μm), (c) x-ray diffraction spectrum of the Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (3 nm) structure, and (d) fitted peaks of Pt (002) and MnGa (002) of the Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (3 nm) structure, with black, red, pink, and blue curves representing the experimental data, fitted sum of peaks, fitted Pt (002) peak, and fitted MnGa (002) peak, respectively.

Fig. 2.  

(a) RAH loop and (b) out-of-plane magnetic hysteresis loop at room temperature of sample R. (c) RAH loops of sample A at different temperatures. (d) Plots of temperature-dependent coercivity and out-of-plane remnant magnetization of sample A. (e) Plot of temperature-dependent out-of-plane remnant magnetization of sample A. (f) Remnant Hall resistance varying with temperature of sample A, showing opposite magnetic configurations in the process of temperature changing. (g) Schematic diagrams of the magnetic moment states at points A, B, C and D of (e) with “↑” and “↓” representing the magnetic moments parallel and antiparallel to the positive direction separately.

Fig. 3.  

RAH loop at (a) 280 K and (b) 240 K and SOT-induced switching loop at (c) 280 K and (d) 240 K, of sample B (Co2MnSi (0.7 nm)/L10–MnGa (3 nm)/Pt (5 nm)).

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