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Chin. Phys. B, 2020, Vol. 29(8): 080701    DOI: 10.1088/1674-1056/ab90f7
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Simulation study of high voltage GaN MISFETs with embedded PN junction

Xin-Xing Fei(费新星)1, Ying Wang(王颖)2, Xin Luo(罗昕)1, Cheng-Hao Yu(于成浩)2
1 College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China;
2 Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

In this paper, we propose a new enhanced GaN MISFET with embedded pn junction, i.e., EJ-MISFET, to enhance the breakdown voltage. The embedded pn junction is used to improve the simulated device electric field distribution between gate and drain, thus achieving an enhanced breakdown voltage (BV). The proposed simulated device with LGD=15 μm presents an excellent breakdown voltage of 2050 V, which is attributed to the improvement of the device electric field distribution between gate and drain. In addition, the ON-resistance (RON) of 15.37 Ω·mm and Baliga's figure of merit of 2.734 GW·cm-2 are achieved in the optimized EJ-MISFET. Compared with the field plate conventional GaN MISFET (FPC-MISFET) without embedded pn junction structure, the proposed simulated device increases the BV by 32.54% and the Baliga's figure of merit is enhanced by 71.3%.

Keywords:  TCAD      Baliga's figure of merit (BFOM)      breakdown voltage (BV)  
Received:  24 February 2020      Revised:  23 April 2020      Published:  05 August 2020
PACS:  07.05.Tp (Computer modeling and simulation)  
  94.20.Ss (Electric fields; current system)  
  51.50.+v (Electrical properties)  
  84.30.Jc (Power electronics; power supply circuits)  

Project supported by the National Natural Science Foundation of China (Grant No. 61774052) and the Excellent Youth Foundation of Zhejiang Province, China (Grant No. LR17F040001).

Corresponding Authors:  Ying Wang     E-mail:

Cite this article: 

Xin-Xing Fei(费新星), Ying Wang(王颖), Xin Luo(罗昕), Cheng-Hao Yu(于成浩) Simulation study of high voltage GaN MISFETs with embedded PN junction 2020 Chin. Phys. B 29 080701

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