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Chin. Phys. B, 2020, Vol. 29(6): 067403    DOI: 10.1088/1674-1056/ab8a37
Special Issue: SPECIAL TOPIC — Topological 2D materials
SPECIAL TOPIC—Topological 2D materials Prev   Next  

Effect of graphene grain boundaries on MoS2/graphene heterostructures

Yue Zhang(张悦)1, Xiangzhe Zhang(张祥喆)2, Chuyun Deng(邓楚芸)2, Qi Ge(葛奇)3, Junjie Huang(黄俊杰)1, Jie Lu(卢捷)1, Gaoxiang Lin(林高翔)1, Zekai Weng(翁泽锴)1, Xueao Zhang(张学骜)1,3, Weiwei Cai(蔡伟伟)1,3
1 College of Physical Science and Technology, Xiamen University, Xiamen 361005, China;
2 College of Arts and Science, National University of Defense Technology, Changsha 410073, China;
3 Chongqing 2D Materials Institute, Chongqing 400714, China
Abstract  The grain boundaries of graphene are disordered topological defects, which would strongly affect the physical and chemical properties of graphene. In this paper, the spectral characteristics and photoresponse of MoS2/graphene heterostructures are studied. It is found that the blueshift of the G and 2D peaks of graphene in Raman spectrum is due to doping. The lattice mismatch at the graphene boundaries results in a blueshift of MoS2 features in the photoluminescence spectra, comparing to the MoS2 grown on SiO2. In addition, the photocurrent signal in MoS2/hexagonal single-crystal graphene heterostructures is successfully captured without bias, but not in MoS2/polycrystalline graphene heterostructures. The electron scattering at graphene grain boundaries affects the optical response of MoS2/graphene heterostructures. The photoresponse of the device is attributed to the optical absorption and response of MoS2 and the high carrier mobility of graphene. These findings offer a new approach to develop optoelectronic devices based on two-dimensional material heterostructures.
Keywords:  photoresponse      heterostructures      grain-boundary  
Received:  15 December 2019      Revised:  13 April 2020      Published:  05 June 2020
PACS:  74.25.Gz (Optical properties)  
  78.20.Jq (Electro-optical effects)  
  42.70.Gi (Light-sensitive materials)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11874423).
Corresponding Authors:  Xueao Zhang, Weiwei Cai     E-mail:;

Cite this article: 

Yue Zhang(张悦), Xiangzhe Zhang(张祥喆), Chuyun Deng(邓楚芸), Qi Ge(葛奇), Junjie Huang(黄俊杰), Jie Lu(卢捷), Gaoxiang Lin(林高翔), Zekai Weng(翁泽锴), Xueao Zhang(张学骜), Weiwei Cai(蔡伟伟) Effect of graphene grain boundaries on MoS2/graphene heterostructures 2020 Chin. Phys. B 29 067403

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