Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

doi:10.1088/1674-1056/ab8a34

Abstract HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃; furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10^-7 A/cm² at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.

Keywords: HfAlO/InAlAs MOS-capacitor annealing temperature interface leakage current

Received: 12 March 2020
Published: 05 September 2020

PACS:	67.30.hp	(Interfaces)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	61.72.uj	(III-V and II-VI semiconductors)

Corresponding Authors: He Guan
E-mail: he.guan@nwpu.edu.cn

Cite this article:

He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙) Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor 2020 Chin. Phys. B 29 096701

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