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Chin. Phys. B, 2020, Vol. 29(9): 096701    DOI: 10.1088/1674-1056/ab8a34
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor

He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙)
Northwestern Polytechnical University, Xi'an 710072, China
Abstract  HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃; furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10-7 A/cm2 at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.
Keywords:  HfAlO/InAlAs MOS-capacitor      annealing temperature      interface      leakage current  
Received:  12 March 2020      Published:  05 September 2020
PACS:  67.30.hp (Interfaces)  
  68.37.-d (Microscopy of surfaces, interfaces, and thin films)  
  61.72.uj (III-V and II-VI semiconductors)  
Corresponding Authors:  He Guan     E-mail:  he.guan@nwpu.edu.cn

Cite this article: 

He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙) Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor 2020 Chin. Phys. B 29 096701

[1] Moschetti G, Wadefalk N and Nilsson P A 2011 Solid State Electron. 64 47
[2] Haddadi A, Chevallier R and Dehzangi A 2017 Appl. Phys. Lett. 110 101
[3] Guan H, Lv H L, Guo H and Zhang Y M 2015 J. Appl. Phys. 118 195702
[4] Malmkvist M, Lefebvre E, Borg M, Desplanque L, Wallart X and Dambrine G 2018 IEEE Trans. Microwave Theory & Tech. 56 2685
[5] Guan H and Guo H 2017 Chin. Phys. B 26 058501
[6] Moschetti G, Wadefalk N and Nilsson P A 2012 IEEE Microwave & Wireless Compon. Lett. 22 144
[7] Cui X R and Lv H L 2018 J. Infrared & Millimeter Waves 37 385
[8] Hashizume T, Ootomo S and Inagaki T 2003 J. Vac. Sci. Technol. B 21 1828
[9] Guan H and Lv H L 2018 Thin Solid Film 661 137
[10] Wu L F, Zhang Y M and Lv H L 2015 Jpn. J. Appl. Phys. 54 110303
[11] Liu L N, Choi H W, Xu J P and Tang W M 2007 IEEE Trans. Electron Dev. 65 72
[12] Jin C J, Lv H L, Zhang Y M and Guan H 2016 Thin Solid Films 619 48
[13] Mikhelashvili V, Meyler B and Shneider J 2005 Microelectron. Reliab. 45 933
[14] Gao J, He G and Liu M 2017 J. Alloys Compd. 691 504
[15] Jin C J, Lv H L, Zhang Y M and Guan H 2016 Solid-State Electron. 123 106
[16] Lin Y C, Trinh H D and Chuang T W 2013 IEEE Electron Dev. Lett. 34 1229
[17] Trinh H, Lin Y, Wang H, Chang C, Kakushima K and Iwai H 2012 Appl. Phys. Express 5 1104
[18] Altuntas H, Donmez I, Ozgit-Akgun C and Biyikli N 2014 J. Vac. Sci. Technol. A 32 041504
[19] Liu C, Zhang Y M, Zhang Y M and Lv H L 2014 J. Appl. Phys. 116 142101
[20] Maleev N A, Bobrov M A, Kuzmenkov A G, Vasil'Ev A P and Kulagina M M 2018 Tech. Phys. Lett. 44 862
[21] Asif M, Chen C, Peng D, Xi W and Zhi J 2018 Solid State Electron. 142 36
[22] Guan H and Jing C Y 2018 Coating 8 417
[23] Brennan B, Galatage R V and Thomas K 2013 J. Appl. Phys. 114 317
[24] Inci D, Cagla O and Necmi B 2013 J. Vac. Sci. Technol. A 31 01A110
[25] Guan H, Lv H L, Guo H, Zhang Y M, Zhang Y M and Wu L F 2015 Chin. Phys. B 24 126701
[26] Terman L M 1962 Solid State Electron. 5 285
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