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Chin. Phys. B, 2020, Vol. 29(5): 058501    DOI: 10.1088/1674-1056/ab7d99
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Zhijun Lyu(吕智军)1, Hongliang Lu(吕红亮)1, Yuming Zhang(张玉明)1, Yimen Zhang(张义门)1, Bin Lu(芦宾)2, Yi Zhu(朱翊)1, Fankang Meng(孟凡康)1, Jiale Sun(孙佳乐)1
1 The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China
Abstract  A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance. By introducing a source with linearly graded component, the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing (SS) due to the improved band-to-band tunneling efficiency. Compared with the conventional TFETs, much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec. Furthermore, the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.
Keywords:  vertical graded source      band-to-band tunneling (BTBT)      tunnel field-effect transistor (TFET)     
Received:  23 December 2019      Published:  05 May 2020
PACS:  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  81.05.Ea (III-V semiconductors)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 90304190002).
Corresponding Authors:  Hongliang Lu     E-mail:  hllv@mail.xidian.edu.cn

Cite this article: 

Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐) Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source 2020 Chin. Phys. B 29 058501

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