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Chin. Phys. B, 2020, Vol. 29(4): 047802    DOI: 10.1088/1674-1056/ab790a
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益)
National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
Abstract  It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing. The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection. Thus, there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing, even under the same lattice temperature. A modified and easily used ABC-model is proposed. It describes that the slope of the radiative recombination rate gradually decreases to zero, and further reaches a negative value in a small range of lattice temperature increasing. These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.
Keywords:  InGaN-based light-emitting diode      carrier recombination      ABC-model      lattice temperature  
Received:  16 January 2020      Revised:  18 February 2020      Published:  05 April 2020
PACS:  78.60.Fi (Electroluminescence)  
  85.30.-z (Semiconductor devices)  
  81.05.Ea (III-V semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51602141, 11674147, 61604066, 11604137, and 21405076), the National Key Research and Development Project of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), and the Key Research and Development Project of Jiangxi Province, China (Grant No. 20171BBE50052).
Corresponding Authors:  Jian-Li Zhang     E-mail:  zhangjianli@ncu.edu.cn

Cite this article: 

Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益) Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection 2020 Chin. Phys. B 29 047802

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