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Chin. Phys. B, 2020, Vol. 29(4): 047305    DOI: 10.1088/1674-1056/ab7909
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Wei-Fan Wang(王伟凡)1,2, Jian-Feng Wang(王建峰)1,2,3, Yu-Min Zhang(张育民)2,3, Teng-Kun Li(李腾坤)1,2, Rui Xiong(熊瑞)2, Ke Xu(徐科)1,2,3
1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China
Abstract  The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized. Compared with the Schottky barrier diode (SBD) without boron-implanted termination, this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 105 times. In addition, a high Ion/Ioff ratio of ~108 was achieved by the boron-implanted technology. We used Technology Computer Aided Design (TCAD) to analyze reasons for the improved performance of the SBD with boron-implanted termination. The improved performance of diodes may be attributed to that B+ could confine free carriers to suppress electron field crowding at the edge of the diode, which could improve the breakdown voltage and suppress the reverse leakage current.
Keywords:  termination technology      boron ion implantation      vertical GaN Schottky barrier diode  
Received:  07 January 2020      Revised:  07 February 2020      Published:  05 April 2020
PACS:  73.61.Ey (III-V semiconductors)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  51.50.+v (Electrical properties)  
Fund: Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100) and Science and Technology Planning Project of Guangdong Province, China (Grant No. 2017B010112001).
Corresponding Authors:  Jian-Feng Wang, Ke Xu     E-mail:  jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn

Cite this article: 

Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科) Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination 2020 Chin. Phys. B 29 047305

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