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Chin. Phys. B, 2020, Vol. 29(4): 048505    DOI: 10.1088/1674-1056/ab77fd
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

A method of generating random bits by using electronic bipolar memristor

Bin-Bin Yang(杨彬彬)1,2, Nuo Xu(许诺)2, Er-Rui Zhou(周二瑞)1,2, Zhi-Wei Li(李智炜)3, Cheng Li(李成)1,2, Pin-Yun Yi(易品筠)1,2, Liang Fang(方粮)1,2
1 Institute for Quantum Information&State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China;
2 College of Computer, National University of Defense Technology, Changsha 410073, China;
3 College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China
Abstract  The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory. However, such a weakness can be used as an asset for generating the random bits, which is valuable in a hardware security system. In this work, a forming-free electronic bipolar Pt/Ti/Ta2O5/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device. The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the “oxygen grabbing” process. The stochasticity of the electrons trapping/de-trapping governs the random distribution of the set/reset switching voltages of the device, making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal. The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.
Keywords:  memristor      resistance switching      electrons trapping/de-trapping      random bits  
Received:  15 September 2019      Revised:  23 January 2020      Accepted manuscript online: 
PACS:  85.35.-p (Nanoelectronic devices)  
  77.80.Fm (Switching phenomena)  
  05.40.-a (Fluctuation phenomena, random processes, noise, and Brownian motion)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61832007) and the National Key Research and Development Program of China (Grant No. 2018YFB1003304).
Corresponding Authors:  Nuo Xu, Liang Fang     E-mail:  oun_ux@163.com;lfang@nudt.edu.cn

Cite this article: 

Bin-Bin Yang(杨彬彬), Nuo Xu(许诺), Er-Rui Zhou(周二瑞), Zhi-Wei Li(李智炜), Cheng Li(李成), Pin-Yun Yi(易品筠), Liang Fang(方粮) A method of generating random bits by using electronic bipolar memristor 2020 Chin. Phys. B 29 048505

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