Low temperature photoluminescence study of GaAs defect states

doi:10.1088/1674-1056/ab5fb8

Abstract Low temperature (77 K) photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality. Several defect-related luminescence peaks have been observed, including 1.452 eV, 1.476 eV, 1.326 eV peaks deriving from 78 meV Ga_As antisite defects, and 1.372 eV, 1.289 eV peaks resulting from As vacancy related defects. Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states. The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.

Keywords: low temperature photoluminescence Ga_{m As} antisite defects luminescence mechanisms of defect states GaAs crystal quality

Received: 26 August 2019
Revised: 17 November 2019
Accepted manuscript online:

PACS:	07.60.-j	(Optical instruments and equipment)
	81.05.-t	(Specific materials: fabrication, treatment, testing, and analysis)
	81.05.Ea	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 21972103), the National Key Research and Development Program of China (Grant No. 2016YFB040183), and Research and Development Program of Shanxi Province, China (Grant No. 201703D111026).

Corresponding Authors: Shu-Fang Ma, Bing-She Xu
E-mail: xubs@tyut.edu.cn;mashufang@sust.edu.cn

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Jia-Yao Huang(黄佳瑶), Lin Shang(尚林), Shu-Fang Ma(马淑芳), Bin Han(韩斌), Guo-Dong Wei(尉国栋), Qing-Ming Liu(刘青明), Xiao-Dong Hao(郝晓东), Heng-Sheng Shan(单恒升), Bing-She Xu(许并社) Low temperature photoluminescence study of GaAs defect states 2020 Chin. Phys. B 29 010703

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Low temperature photoluminescence study of GaAs defect states

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