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Chin. Phys. B, 2020, Vol. 29(1): 017303    DOI: 10.1088/1674-1056/ab5d02
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions

Yan-Qi Li(李彦琪), Hong-Jun Kan(阚洪君), Yuan-Yuan Miao(苗圆圆), Lei Yang(杨磊), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), Gui-Chao Hu(胡贵超)
Shandong Province Key Laboratory of Medical Physics and Image Processing Technology, School of Physics and Electronics, Shandong Normal University, Jinan 250100, China
Abstract  Spin-dependent transport in ferromagnet/organic-ferromagnet/metal junctions is investigated theoretically. The results reveal a large tunneling magnetoresistance up to 3230% by controlling the relative magnetization orientation between the ferromagnet and the central organic ferromagnet. The mechanism is explained by distinct efficient spin-resolved tunneling states in the ferromagnet between the parallel and antiparallel spin configurations. The key role of the organic ferromagnet in generating the large magnetoresistance is explored, where the spin selection effect is found to enlarge the difference of the tunneling states between the parallel and antiparallel configurations by comparing with the conventional organic spin valves. The effects of intrinsic interactions in the organic ferromagnet including electron-lattice interaction and spin coupling with radicals on the magnetoresistance are discussed. This work demonstrates a promising potential of organic ferromagnets in the design of high-performance organic spin valves.
Keywords:  organic ferromagnet      organic spintronics      tunneling magnetoresistance  
Received:  03 October 2019      Revised:  13 November 2019      Accepted manuscript online: 
PACS:  73.63.-b (Electronic transport in nanoscale materials and structures)  
  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11974215, 11704230, 11674197, and 11874242), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA043), and the Taishan Scholar Project of Shandong Province, China.
Corresponding Authors:  Gui-Chao Hu     E-mail:  hgc@sdnu.edu.cn

Cite this article: 

Yan-Qi Li(李彦琪), Hong-Jun Kan(阚洪君), Yuan-Yuan Miao(苗圆圆), Lei Yang(杨磊), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), Gui-Chao Hu(胡贵超) Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions 2020 Chin. Phys. B 29 017303

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