Please wait a minute...
Chin. Phys. B, 2019, Vol. 28(10): 107307    DOI: 10.1088/1674-1056/ab43ba
RAPID COMMUNICATION Prev   Next  

Electronic structure of molecular beam epitaxy grown 1T'-MoTe2 film and strain effect

Xue Zhou(周雪)1, Zeyu Jiang(姜泽禹)1, Kenan Zhang(张柯楠)1, Wei Yao(姚维)1, Mingzhe Yan(颜明哲)1, Hongyun Zhang(张红云)1, Wenhui Duan(段文晖)1, Shuyun Zhou(周树云)1,2
1 State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
Abstract  

Atomically thin transition metal dichalcogenide films with distorted trigonal (1T') phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T' film and experimental investigation of its electronic structure are critical. Here we report the electronic structure of 1T'-MoTe2 films grown by molecular beam epitaxy (MBE). Growth of the 1T'-MoTe2 film depends critically on the substrate temperature, and successful growth of the film is indicated by streaky stripes in the reflection high energy electron diffraction (RHEED) and sharp diffraction spots in the low energy electron diffraction (LEED). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a metallic behavior in the as-grown film with an overlap between the conduction and valence bands. First principles calculation suggests that a suitable tensile strain along the a-axis direction is needed to induce a gap to make it an insulator. Our work not only reports the electronic structure of MBE grown 1T'-MoTe2 films, but also provides insights for strain engineering to make it possible for quantum spin Hall effect.

Keywords:  quantum spin Hall effect      1T'      -MoTe2      molecular beam epitaxy (MBE)      transition metal dichalcogenides (TMDCs)  
Received:  18 June 2019      Revised:  06 September 2019      Accepted manuscript online: 
PACS:  73.43.-f (Quantum Hall effects)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
  71.15.-m (Methods of electronic structure calculations)  
  68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)  
Fund: 

Project supported by the National Basic Research Program of China (Grant Nos. 2016YFA0301004 and 2015CB921001) and the National Natural Science Foundation of China (Grant Nos. 11334006, 11725418, and 11674188).

Corresponding Authors:  Shuyun Zhou     E-mail:  syzhou@mail.tsinghua.edu.cn

Cite this article: 

Xue Zhou(周雪), Zeyu Jiang(姜泽禹), Kenan Zhang(张柯楠), Wei Yao(姚维), Mingzhe Yan(颜明哲), Hongyun Zhang(张红云), Wenhui Duan(段文晖), Shuyun Zhou(周树云) Electronic structure of molecular beam epitaxy grown 1T'-MoTe2 film and strain effect 2019 Chin. Phys. B 28 107307

[29] Tang S J, Zhang C F, Jia C J, Ryu H, Hwang C, Hashimoto M, Lu D H, Liu Z, Devereaux T P, Shen Z X and Mo S K 2018 APL Mater. 6 026601
[1] Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045
[30] Diaz H C, Chaghi R, Ma Y J and Batzill M 2015 2D Mater. 2 040010
[2] Qi X L and Zhang S C 2011 Rev. Mod. Phys. 83 1057
[31] Wang Q Y, Zhang W H, Wang L L, He K, Ma X C and Xue Q K 2013 J. Phys.: Condens. Matter 25
[3] Bernevig B A, Hughes T L and Zhang S C 2006 Science 314 1757
[32] Kresse G and Furthmüller J 1996 Phys. Rev. B 54 11169
[4] König M, Wiedmann S, Brüne C, Roth A, Buhmann H, Molenkamp L W, Qi X L and Zhang S C 2007 Science 318 766
[33] Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[5] Liu C X, Hughes T L, Qi X L, Wang K and Zhang S C 2008 Phys. Rev. Lett. 100 236601
[34] Koma A, Sunouchi K and Miyajima T 1984 J. Vac. Sci. Technol. B 3 724
[6] Kane C L and Mele E J 2005 Phys. Rev. Lett. 95 226801
[35] Sun Y F, Wang Y X, Sun D, Carvalho B R, Read C G, Lee C h, Lin Z, Fujisawa K, Robinson J A, Crespi V H, Terrones M and Schaak R E 2016 Angew. Chem. Int. Ed. 55 2830
[7] Qian X F, Li J W, Fu L and Li J 2014 Science 346 1344
[36] Ruppert C, Aslan O B and Heinz T F 2014 Nano Lett. 11 6231
[8] Guo H, Zhang X and Shiping F 2012 Chin. Phys. B 21 117301
[37] Zhang H Y, Bao C H, Jiang Z Y, Zhang K N, Li H, Chen C Y, Wu Y, Duan W H, Asensio M C and Zhou S Y 2018 Nano Lett. 18 4664
[9] Rehman M U and Abid A A 2017 Chin. Phys. B 26 127304
[38] Zheng F P, Cai C Y, Ge S F, Zhang X F, Liu X, Lu H, Zhang Y D, Qiu J, Taniguchi T, Watanabe K, Jia S, Qi J S, Chen J H, Sun D and Feng J 2016 Adv. Mater. 28 4845
[10] Wang X, Li P and Ran Zhao Luo W 2018 Chin. Phys. B 27 087305
[39] Yang J J, Colen J, Liu J, Nguyen M C, Chern G W and Louca D 2017 Sci. Adv. 3 eaao4949
[11] Shen D P, Zhang X D, Sun Y, Kang T T, Dai N and Chu Jun Haoand Yu G L 2017 Acta Phys. Sin. 66 247301 (in Chinese)
[40] Kim H J, Kang S H, Hamada I and Son Y W 2017 Phys. Rev. B 95 180101
[12] Tang S J, Zhang C F, Wong D, et al. 2017 Nat. Phys. 13 683
[41] Dai X, Le C, Wu X X and Qin S S 2016 Chin. Phys. Lett. 33 127301
[13] Fei Z Y, Palomaki T, Wu S F, Zhao W J, Cai X H, Sun B S, Nguyen P, Finney J, Xu X D and Cobden D H 2017 Nat. Phys. 13 677
[14] Wu S F, Fatemi V, Gibson Q D, Watanabe K, Taniguchi T, Cava R J and Jarillo-Herrero P 2018 Science 359 76
[15] Keum D H, Cho S, Kim J H, Choe D H, Sung H J, Kan M, Kang H, Hwang J Y, Kim S W, Yang H, Chang K J and Lee Y H 2015 Nat. Phys. 11 482
[16] Zhang K N, Bao C H, Gu Q Q, Ren X, Zhang H X, Deng K, Wu Y, Li Y, Feng J and Zhou S Y 2016 Nat. Commun. 7 13552
[17] Soluyanov A A, Gresch D, Wang Z, Wu Q, Troyer M, Dai X and Bernevig B A 2015 Nature 527 495
[18] Deng K, Wan G L, Deng P, Zhang K N, Ding S J, Wang E Y, Yan M Z, Huang H Q, Zhang H Y, Xu Z L, Denlinger J, Fedorov A, Yang H T, Duan W H, Fan S S, Zhang H J, Chen X and Zhou S Y 2016 Nat. Phys. 12 1105
[19] Huang L, McCormick T M, Masayuki O, Zhao Z, Suzuki M T, Arita R, Wu Y, Mou D X, Cao H B, Yan J Q, Trivedi N and Kaminski A 2016 Nat. Mater. 1 1155
[20] Qi Y P, Naumov P G, Ali M N, Rajamathi C R, Schnelle W, Barkalov O, Hanfland M, Wu S C, Shekhar C, Sun Y, Süß V, Schmidt M, Schwarz U, Felser C, Yan B H and Medvedev S A 2016 Nat. Commun. 7 11038
[21] Park J C, Yun S J, Kim H, Park J H, Chae S H, An S J, Kim J G, Kim S M, Kim K K and Lee Y H 2015 Acs Nano 9 6548
[22] Zhou L, Zubair A, Wang Z, Zhang X, Ouyang F P, Xu K, Fang W J, Ueno K, Li J, Palacios T, Kong J and Dresselhaus M S 2016 Adv. Mater. 28 9526
[23] Naylor C H, Parkin W M, Ping J L, Gao Z L, Zhou Y R, Kim Y, Streller F, Carpick R W, Rappe A M, Drndić M and Kikkawa J M 2016 Nano Lett. 16 4297
[24] Han G H, Keum D, Zhao J, Shin B G, Song S, Bae J J, Lee J, Kim J H, Moon B H and Lee Y H 2016 2D Mater. 2 031010
[25] Zhou J D, Liu F C, Lin J H, Huang X W, Xia J, Zhang B W, Zeng Q S, Wang H, Zhu C, Niu L, Wang X W, Fu W, Yu P, Chang T R, Hsu C H, Wu D, Jeng H T, Huang Y Z, Lin H, Shen Z X, Yang C L, Lu L, Suenaga K, Zhou W, Pantelides S T, Liu G T and Liu Z 2016 Adv. Mater. 29 1603471
[26] Chen J L, Wang G Y, Tang Y, Tian H, Xu J P, Dai X Q, Xu H, Jia J F, Wingkin H and Xie M H 2017 ACS Nano 11 3282
[27] Yu Y, Wang G, Qin S, Wu N, Wang Z, He K and Zhang X A 2017 Carbon 115 526
[28] Vishwanath S, Sundar A, Liu X Y, Azcatl A, Lochocki E, Woll A R, Rouvimov S, Hwang W S, Lu N, Peng X, Lien H H, Weisenberger J, McDonnell S, Kim M J, Dobrowolska M, Furdyna J K, Shen K, Wallace R M, Jena D and Xing H G 2017 J. Cryst. Growth 482 61
[29] Tang S J, Zhang C F, Jia C J, Ryu H, Hwang C, Hashimoto M, Lu D H, Liu Z, Devereaux T P, Shen Z X and Mo S K 2018 APL Mater. 6 026601
[30] Diaz H C, Chaghi R, Ma Y J and Batzill M 2015 2D Mater. 2 040010
[31] Wang Q Y, Zhang W H, Wang L L, He K, Ma X C and Xue Q K 2013 J. Phys.: Condens. Matter 25
[32] Kresse G and Furthmüller J 1996 Phys. Rev. B 54 11169
[33] Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[34] Koma A, Sunouchi K and Miyajima T 1984 J. Vac. Sci. Technol. B 3 724
[35] Sun Y F, Wang Y X, Sun D, Carvalho B R, Read C G, Lee C h, Lin Z, Fujisawa K, Robinson J A, Crespi V H, Terrones M and Schaak R E 2016 Angew. Chem. Int. Ed. 55 2830
[36] Ruppert C, Aslan O B and Heinz T F 2014 Nano Lett. 11 6231
[37] Zhang H Y, Bao C H, Jiang Z Y, Zhang K N, Li H, Chen C Y, Wu Y, Duan W H, Asensio M C and Zhou S Y 2018 Nano Lett. 18 4664
[38] Zheng F P, Cai C Y, Ge S F, Zhang X F, Liu X, Lu H, Zhang Y D, Qiu J, Taniguchi T, Watanabe K, Jia S, Qi J S, Chen J H, Sun D and Feng J 2016 Adv. Mater. 28 4845
[39] Yang J J, Colen J, Liu J, Nguyen M C, Chern G W and Louca D 2017 Sci. Adv. 3 eaao4949
[40] Kim H J, Kang S H, Hamada I and Son Y W 2017 Phys. Rev. B 95 180101
[41] Dai X, Le C, Wu X X and Qin S S 2016 Chin. Phys. Lett. 33 127301
[1] Coexistence of giant Rashba spin splitting and quantum spin Hall effect in H-Pb-F
Wenming Xue(薛文明), Jin Li(李金), Chaoyu He(何朝宇), Tao Ouyang(欧阳滔), Xiongying Dai(戴雄英), and Jianxin Zhong(钟建新). Chin. Phys. B, 2023, 32(3): 037101.
[2] Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties
Zhen-Hua Li(李振华), Peng-Fei Shao(邵鹏飞), Gen-Jun Shi(施根俊), Yao-Zheng Wu(吴耀政), Zheng-Peng Wang(汪正鹏), Si-Qi Li(李思琦), Dong-Qi Zhang(张东祺), Tao Tao(陶涛), Qing-Jun Xu(徐庆君), Zi-Li Xie(谢自力), Jian-Dong Ye(叶建东), Dun-Jun Chen(陈敦军), Bin Liu(刘斌), Ke Wang(王科), You-Dou Zheng(郑有炓), and Rong Zhang(张荣). Chin. Phys. B, 2022, 31(1): 018102.
[3] Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers
Yong Li(李勇), Xiao-Ming Li(李晓明), Rui-Ting Hao(郝瑞亭), Jie Guo(郭杰), Yu Zhuang(庄玉), Su-Ning Cui(崔素宁), Guo-Shuai Wei(魏国帅), Xiao-Le Ma(马晓乐), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川), and Yao Wang(王耀). Chin. Phys. B, 2021, 30(2): 028504.
[4] Electronic structures and topological properties of TeSe2 monolayers
Zhengyang Wan(万正阳), Hao Huan(郇昊), Hairui Bao(鲍海瑞), Xiaojuan Liu(刘晓娟), and Zhongqin Yang(杨中芹). Chin. Phys. B, 2021, 30(11): 117304.
[5] Progress on 2D topological insulators and potential applications in electronic devices
Yanhui Hou(侯延辉), Teng Zhang(张腾), Jiatao Sun(孙家涛), Liwei Liu(刘立巍), Yugui Yao(姚裕贵), Yeliang Wang(王业亮). Chin. Phys. B, 2020, 29(9): 097304.
[6] Thickness-dependent excitonic properties of atomically thin 2H-MoTe2
Jin-Huan Li(李金焕), Dan Bing(邴单), Zhang-Ting Wu(吴章婷), Guo-Qing Wu(吴国庆), Jing Bai(白静), Ru-Xia Du(杜如霞), Zheng-Qing Qi(祁正青). Chin. Phys. B, 2020, 29(1): 017802.
[7] Superconductivity of bilayer titanium/indium thin film grown on SiO2/Si (001)
Zhao-Hong Mo(莫钊洪), Chao Lu(路超), Yi Liu(刘毅), Wei Feng(冯卫), Yun Zhang(张云), Wen Zhang(张文), Shi-Yong Tan(谭世勇), Hong-Jun Zhang(张宏俊), Chun-Yu Guo(郭春煜), Xiao-Dong Wang(汪小冬), Liang Wang(王亮), Rui-Zhu Yang(杨蕊竹), Zhong-Guo Ren(任忠国), Xie-Gang Zhu(朱燮刚), Zhong-Hua Xiong(熊忠华), Qi An(安琪), Xin-Chun Lai(赖新春). Chin. Phys. B, 2018, 27(6): 067403.
[8] 1.3-μm InAs/GaAs quantum dots grown on Si substrates
Fu-Hui Shao(邵福会), Yi Zhang(张一), Xiang-Bin Su(苏向斌), Sheng-Wen Xie(谢圣文), Jin-Ming Shang(尚金铭), Yun-Hao Zhao(赵云昊), Chen-Yuan Cai(蔡晨元), Ren-Chao Che(车仁超), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2018, 27(12): 128105.
[9] Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures
Majeed Ur Rehman, A A Abid. Chin. Phys. B, 2017, 26(12): 127304.
[10] Topological insulator nanostructures and devices
Xiu Fa-Xian (修发贤), Zhao Tong-Tong (赵彤彤). Chin. Phys. B, 2013, 22(9): 096104.
[11] Spin Chern numbers and time-reversal-symmetry-broken quantum spin Hall effect
Sheng Li (盛利), Li Hui-Chao (李会超), Yang Yun-You (杨运友), Sheng Dong-Ning (盛冬宁), Xing Ding-Yu (邢定钰). Chin. Phys. B, 2013, 22(6): 067201.
[12] Quantum spin Hall effect in a square-lattice model under a uniform magnetic field
Guo Huai-Ming(郭怀明) and Feng Shi-Ping(冯世平) . Chin. Phys. B, 2012, 21(7): 077303.
[13] The robustness of quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells
Guo Huai-Ming (郭怀明), Zhang Xiang-Lin (张相林), Feng Shi-Ping (冯世平 ). Chin. Phys. B, 2012, 21(11): 117301.
[14] A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
Ma Long(马龙), Huang Ying-Long(黄应龙), Zhang Yang(张杨), Yang Fu-Hua(杨富华), and Wang Liang-Chen(王良臣). Chin. Phys. B, 2006, 15(10): 2422-2426.
[15] Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy
Zhou Da-Yong (周大勇), Lan Qing (澜清), Kong Yun-Chuan (孔云川), Miao Zhen-Hua (苗振华), Feng Song-Lin (封松林), Niu Zhi-Chuan (牛智川). Chin. Phys. B, 2003, 12(2): 218-221.
No Suggested Reading articles found!