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Chin. Phys. B, 2019, Vol. 28(10): 107803    DOI: 10.1088/1674-1056/ab4046
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells

Chang-Fu Li(李长富)1,2, Kai-Ju Shi(时凯居)1, Ming-Sheng Xu(徐明升)1, Xian-Gang Xu(徐现刚)3, Zi-Wu Ji(冀子武)1
1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 School of Physics and Electronic Engineering, Taishan University, Taian 271000, China;
3 Key Laboratory of Functional Crystal Materials and Devices(Ministry of Education), Shandong University, Jinan 250100, China
Abstract  The photoluminescence (PL) properties of blue multiple InGaN/GaN quantum well (BMQW) and green multiple InGaN/GaN quantum well (GMQW) formed on a single sapphire substrate are investigated. The results indicate that the peak energy of GMQW-related emission (PG) exhibits more significant “S-shaped” dependence on temperature than that of BMQW-related emission (PB), and the excitation power-dependent carrier-scattering effect is observed only in the PG emission; the excitation power-dependent total blue-shift (narrowing) of peak position (line-width) for the PG emission is more significant than that for the PB emission; the GMQW shows a lower internal quantum efficiency than the BMQW. All of these results can be attributed to the fact that the GMQW has higher indium content than the BMQW due to its lower growth temperature and late growth, and the higher indium content in the GMQW induces a more significant compositional fluctuation, a stronger quantum confined Stark effect, and more non-radiative centers.
Keywords:  photoluminescence      multiple quantum wells      localization effect      light-emitting diodes  
Received:  24 June 2019      Revised:  16 August 2019      Published:  05 October 2019
PACS:  78.55.-m (Photoluminescence, properties and materials)  
  78.67.De (Quantum wells)  
  72.15.Rn (Localization effects (Anderson or weak localization))  
  85.60.Jb (Light-emitting devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51672163, 51872167, and 61504044) and the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112).
Corresponding Authors:  Zi-Wu Ji     E-mail:  jiziwu@sdu.edu.cn

Cite this article: 

Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武) Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells 2019 Chin. Phys. B 28 107803

[1] Guo X, Liu Q L, Li C, Liu B, Dong J and Shen G D 2015 Chin. Phys. B 24 068505
[2] Wang D, Liu B, Zhang H, Zhao H, Tao T, Xie Z, Zhang R and Zheng Y 2019 IEEE Photon. J. 11 8200808
[3] Zhang M, Wang F, Wei N, Zhou P, Peng K, Yu J, Wang Z and Wei B 2013 Opt. Express 21 A173
[4] Zhuo S Y, Liu X C, Huang W, Kong H K, Xin J and Shi E W 2019 Chin. Phys. B 28 017101
[5] Zhao Y, Yun F, Wang S, Zheng M, Su X, Guo M, Yang X, Liu S, Ding W and Zhang Y 2015 J. Appl. Phys. 118 145702
[6] Chen L, Cheng W, Tsai C, Chang J, Huang Y, Huang J and Cheng W 2014 Opt. Express 22 A671
[7] Cheng J, Zhang J, Lu J, Bian X T, Zhang H C, Shen Z H, Ni X W, Ma P C and Shi J 2019 Chin. Opt. Lett. 17 051602
[8] Sun H, Ji Z, Wang H, Xiao H, Qu S, Xu X, Jin A and Yang H 2013 J. Appl. Phys. 114 093508
[9] Wang H, Ji Z, Qu S, Wang G, Jiang Y, Liu B, Xu X and Mino H 2012 Opt. Express 20 3932
[10] Zhao Y, Tanaka S, Pan C C, Fujito K, Feezell D, Speck J S, DenBaars S P and Nakamura S 2011 Appl. Phys. Express 4 082104
[11] Wang Q, Yuan G D, Liu W Q, Zhao S, Zhang L, Liu Z Q, Wang J X and Li J M 2019 Chin. Phys. B 28 087802
[12] Damilano B, Grandjean N, Pernot C and Massies J 2001 Jpn. J. Appl. Phys. 40 L918
[13] Huang C F, Lu C F, Tang T Y, Huang J J and Yang C C 2007 Appl. Phys. Lett. 90 151122
[14] Narukawa Y, Ichikawa M, Sanga D, Sano M and Mukai T 2010 J. Phys. D: Appl. Phys. 43 354002
[15] Gačević Ž, Das A, Teubert J, Kotsar Y, Kandaswamy P K, Kehagias Th, Koukoula T, Komninou Ph and Monroy E 2011 J. Appl. Phys. 109 103501
[16] Hao M, Zhang J, Zhang X H and Chua S 2002 Appl. Phys. Lett. 81 5129
[17] Cho Y H, Gainer G H, Fischer A J, Song J J, Keller S, Mishra U K and DenBaars S P 1998 Appl. Phys. Lett. 73 1370
[18] Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H and Akasaki I 1997 Jpn. J. Appl. Phys. 36 L382
[19] Chen Z, Yang W, Liu L, Wan C H, Li L, He Y F, Liu N Y, Wang L, Li D, Chen W and Hu X D 2012 Chin. Phys. B 21 108505
[20] Lai Y, Liu C, Lin Y, Hsueh T, Lin R, Lyu D, Peng Z and Lin T 2006 Nanotechnology 17 3734
[21] Wang Q, Ji Z W, Wang F, Mu Q, Zheng Y J, Xu X G, Lv Y J and Feng Z H 2015 Chin. Phys. B 24 024219
[22] Ma Z and Pierz K 2002 Surface Science 511 57
[23] Mu Q, Xu M, Wang X, Wang Q, Lv Y, Feng Z, Xu X and Ji Z 2016 Physica E 76 1
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