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Chin. Phys. B, 2019, Vol. 28(10): 107504    DOI: 10.1088/1674-1056/ab3e45
Special Issue: SPECIAL TOPIC — A celebration of the 100th birthday of Kun Huang
SPECIAL TOPIC—A celebration of the 100th birthday of Kun Huang Prev   Next  

Two-dimensional XSe2 (X=Mn, V) based magnetic tunneling junctions with high Curie temperature

Longfei Pan(潘龙飞)1, Hongyu Wen(文宏玉)1, Le Huang(黄乐)2, Long Chen(陈龙)3, Hui-Xiong Deng(邓惠雄)1, Jian-Bai Xia(夏建白)1,4, Zhongming Wei(魏钟鸣)1,4
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;
2 School of Materials and Energy, Guangdong University of Technology, Guangdong 510006, China;
3 Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Tianjin University, Tianjin 300072, China;
4 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
Abstract  Two-dimensional (2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research, magnetic tunneling junctions (MTJs) based on XSe2 (X=Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance (TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe2. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias. The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe2 (X=Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.
Keywords:  two-dimensional material      magnetic tunneling junctions      tunneling magnetoresistance      ferromagnetism  
Received:  13 August 2019      Revised:  25 August 2019      Accepted manuscript online: 
PACS:  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
  75.70.Ak (Magnetic properties of monolayers and thin films)  
  68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61571415 and 61622406), the National Key Research and Development Program of China (Grant No. 2017YFA0207500), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB30000000), and Beijing Academy of Quantum Information Sciences, China (Grant No. Y18G04).
Corresponding Authors:  Hongyu Wen, Zhongming Wei     E-mail:  wenhongyu@semi.ac.cn;zmwei@semi.ac.cn

Cite this article: 

Longfei Pan(潘龙飞), Hongyu Wen(文宏玉), Le Huang(黄乐), Long Chen(陈龙), Hui-Xiong Deng(邓惠雄), Jian-Bai Xia(夏建白), Zhongming Wei(魏钟鸣) Two-dimensional XSe2 (X=Mn, V) based magnetic tunneling junctions with high Curie temperature 2019 Chin. Phys. B 28 107504

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