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Chin. Phys. B, 2019, Vol. 28(9): 098506    DOI: 10.1088/1674-1056/ab38ac
Special Issue: TOPICAL REVIEW — A celebration of the 100th birthday of Kun Huang
TOPICAL REVIEW—A celebration of the 100th birthday of Kun Huang Prev   Next  

Homogeneous and inhomogeneous magnetic oxide semiconductors

Xiao-Li Li(李小丽)1,2, Xiao-Hong Xu(许小红)1,2
1 Key Laboratory of Magnetic Molecules & Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;
2 Research Institute of Materials Science of Shanxi Normal University and Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Linfen 041004, Chinas
Abstract  

Magnetic oxide semiconductors are significant spintronics materials. In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors. In the homogeneous magnetic oxide semiconductors, we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping, and even un-doping to realize homogeneous substitution and the clear magnetic origin. And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties. In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices. And the related mechanisms are discussed in details. Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.

Keywords:  magnetic oxide semiconductors      ferromagnetism      magnetoresistance  
Received:  25 June 2019      Revised:  24 July 2019      Accepted manuscript online: 
PACS:  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
  75.50.Pp (Magnetic semiconductors)  
  75.70.-i (Magnetic properties of thin films, surfaces, and interfaces)  
Fund: 

Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0405703), the National Natural Science Foundation of China (Grant Nos. 61434002, 51571136, and 11274214), and the Special Funds of Sanjin Scholars Program, China.

Corresponding Authors:  Xiao-Hong Xu     E-mail:  xuxh@sxnu.edu.cn

Cite this article: 

Xiao-Li Li(李小丽), Xiao-Hong Xu(许小红) Homogeneous and inhomogeneous magnetic oxide semiconductors 2019 Chin. Phys. B 28 098506

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