Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers

doi:10.1088/1674-1056/28/7/078104

Abstract

Systematic investigation of InAs quantum dot (QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots. By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved. The areal quantum dot density is 5.9×10¹⁰ cm^-2, almost double the conventional density (3.0×10¹⁰ cm^-2). Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density. These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.

Keywords: quantum dots growth rate dot density linewidth

Received: 01 April 2019
Revised: 25 April 2019
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.07.Ta	(Quantum dots)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	81.70.-q	(Methods of materials testing and analysis)

Fund:

Project supported by the National Key Technology Research and Development Program of China (Grant No. 2018YFA0306101), the National Natural Science Foundation of China (Grant No. 61505196), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the Guangdong Science and Technology Project, China (Grant No. 20180329).

Corresponding Authors: Hai-Qiao Ni, Zhi-Chuan Niu
E-mail: zcniu@semi.ac.cn;nihq@semi.ac.cn

Cite this article:

Hui-Ming Hao(郝慧明), Xiang-Bin Su(苏向斌), Jing Zhang(张静), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers 2019 Chin. Phys. B 28 078104

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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers

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