Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

doi:10.1088/1674-1056/28/6/066804

Abstract

We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.

Keywords: effective subband mobility thermal activation Coulomb scattering silicon nanowire transistor

Received: 06 March 2019
Revised: 29 March 2019
Accepted manuscript online:

PACS:	68.65.La	(Quantum wires (patterned in quantum wells))
	68.65.Hb	(Quantum dots (patterned in quantum wells))
	05.60.Gg	(Quantum transport)
	11.40.-q	(Currents and their properties)

Fund:

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503).

Corresponding Authors: Wei-Hua Han
E-mail: weihua@semi.ac.cn

Cite this article:

Ya-Mei Dou(窦亚梅), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Xiao-Song Zhao(赵晓松), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华) Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor 2019 Chin. Phys. B 28 066804

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Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

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