| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation |
| Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) |
| School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China |
|
|
|
|
Abstract A power metal-oxide-semiconductor field-effect transistor (MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz-Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.
|
Received: 19 December 2018
Revised: 06 March 2019
Accepted manuscript online:
|
|
PACS:
|
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
77.30.df
|
|
| |
51.50.+v
|
(Electrical properties)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097). |
Corresponding Authors:
Zhi-Gang Wang
E-mail: zhigangwang@swjtu.edu.cn
|
Cite this article:
Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation 2019 Chin. Phys. B 28 058503
|
| [1] |
Li P C, Luo X R, Luo Y C, Zhou K, Shi X L, Zhang Y H and Lv M S 2015 Chin. Phys. B 24 047304
|
| [2] |
Qiao M, Wang Y R, Zhou X, Jin F, Wang H H, Wang Z, Li Z J and Zhang B 2015 Trans. Electron. Devices 62 2933
|
| [3] |
Xia C, Cheng X H, Wang Z J, Cao D, Jia T T, Yu Y H and Shen D S 2013 Trans. Electron. Devices 60 1279
|
| [4] |
Zhou K, Luo X R, Xu Q, Li Z J and Zhang B 2014 Trans. Electron. Devices 61 2466
|
| [5] |
Hu S D, Zhang L, Luo J, Tan K Z, Chen W S, Gan P, Zhou X C and Zhu Z 2013 Electron. Lett. 49 223
|
| [6] |
Hu S D, Zhang L, Luo X R, Zhang B, Li Z J and Wu L J 2011 Chin. Phys. Lett. 28 128503
|
| [7] |
Luo Y C, Luo X R, Hu G Y, Fan Y H, Li P C, Wei J, Tan Q and Zhang B 2014 Chin. Phys. B 23 077306
|
| [8] |
Zheng Z, Li W and Li P 2013 Chin. Phys. B 22 047701
|
| [9] |
Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X and Wei J 2012 Chin. Phys. B 21 068501
|
| [10] |
Zhou K, Luo X R, Fan Y H, Luo Y C, Hu X R and Zhang B 2013 Chin. Phys. B 22 067306
|
| [11] |
Shi X L, Luo X R, Wei J, Tan Q, Liu J P, Xu Q, Li P C, Tian R C and Ma D 2014 Chin. Phys. B 23 127303
|
| [12] |
Williams R K, Darwish M N, Blanchard R A, Siemieniec R, Rutter P and Yusuke Kawaguchi 2017 Trans. Electron. Devices 64 674
|
| [13] |
Luo X R, Zhang B, Li Z J, Guo Y F, Tang X W and Liu Y 2007 IEEE Electron. Dev. Lett. 28 422
|
| [14] |
Son W S, Sohn Y H and Choi S Y 2003 Electron. Lett. 39 1760
|
| [15] |
Wu L J, Zhang W T, Shi Q, Cai P F and He H C 2014 Electron. Lett. 50 1982
|
| [16] |
Yin C, Wei J, Zhou K and Luo X R 2015 Electron. Lett. 51 1348
|
| [17] |
Li W, Zheng Z, Wang Z G, Li P, Fu X J, He Z R, Liu F, Yang F, Xiang F and Liu L C 2012 Chin. Phys. B 21 078502
|
| [18] |
Zhao Y Y, Qiao M, Wang W B, Wang M and Zhang B 2012 Chin. Phys. B 21 018501
|
| [19] |
Udreaa F, Wang Y G, Deng H and Luo X R 2010 Chin. Phys. B 19 077306
|
| [20] |
Wei J, Luo X R, Zhang Y H, Li P C, Zhou K, Li Z J, Lei D M, He F Z and Zhang B 2015 IEEE 27th Symposium on Power Semiconductor Devices and ICs, May 10-14, 2015 Hong Kong, China, 15203419
|
| [21] |
Hu X R and Lv R 2014 Chin. Phys. B 23 128501
|
| [22] |
Hu X R, Zhang B, Luo X R and Li Z J 2012 Solid State Electronics. 69 89
|
| [23] |
Hu X R, Zhang B, Luo X R, Wang Y G, Lei T F and Li Z J 2012 Chin. Phys. B 21 078502
|
| [24] |
Zhang Y H, Wei J, Yin C, Tan Q, Liu J P, Li P C and Luo X R 2016 Chin. Phys. B 25 027306
|
| [25] |
Huang J Q, He W W, Chen J, Luo J X, Lu K and Chai Z 2016 Chin. Phys. Lett. 33 096101
|
| [26] |
Jin Q X, Liu B, Liu Y, Wang W W, Wang H, Xu Z, Gao D, Wang Q, Xia Y Y, Song Z T and Feng S L 2016 Chin. Phys. Lett. 33 098502
|
| [27] |
Yuan S, Duan B X, Cao Z, Guo H J and Yang Y 2016 Solid-State Electron. 123 6
|
| [28] |
Wang B, Wang Z G and Sun J 2016 IEEE International Conference on Solid-State and Integrated Circuit Technology, October 25-28, 2016 Hangzhou, China, 17081943
|
| [29] |
Wang Z G, Zhang B, Fu Q, Xie G and Li Z J 2012 IEEE Electron. Dev. Lett. 33 703
|
| [30] |
Wang Z G, Chen W J, Zhang B and Li Z J 2012 Chin. Phys. B 29 107202
|
| [31] |
Zeev N 1975 Conformal Mapping (New York: Dover Publications) pp. 266-332
|
| [32] |
Panofsky W K H and Phillips M 1962 Classical Electricity and Magnetism (Reading: Addison-Wesley) pp. 245-363
|
| [33] |
Chung S K 2000 IEEE Trans. Electron. Dev. 47 1006
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
