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Chin. Phys. B, 2019, Vol. 28(5): 058503    DOI: 10.1088/1674-1056/28/5/058503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation

Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南)
School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China
Abstract  

A power metal-oxide-semiconductor field-effect transistor (MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz-Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.

Keywords:  conformal mapping      Schwarz-Christoffel transformation      electric field      trench metal-oxide-semiconductor field-effect transistor (MOSFET)      breakdown voltage  
Received:  19 December 2018      Revised:  06 March 2019      Published:  05 May 2019
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  77.30.df  
  51.50.+v (Electrical properties)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Corresponding Authors:  Zhi-Gang Wang     E-mail:  zhigangwang@swjtu.edu.cn

Cite this article: 

Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation 2019 Chin. Phys. B 28 058503

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