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Chin. Phys. B, 2019, Vol. 28(5): 058502    DOI: 10.1088/1674-1056/28/5/058502

Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer

Guang Li(李光)1, Lin-Yuan Wang(王林媛)1, Wei-Dong Song(宋伟东)1, Jian Jiang(姜健)1, Xing-Jun Luo(罗幸君)1, Jia-Qi Guo(郭佳琦)1, Long-Fei He(贺龙飞)1,2, Kang Zhang(张康)2, Qi-Bao Wu(吴启保)3, Shu-Ti Li(李述体)1
1 Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
2 Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences, Guangzhou 510650, China;
3 School of Intelligent Manufacture and Equipment, Shenzhen Institute of Information Technology, Shenzhen 518172, China

The conventional stationary Al content AlGaN electron blocking layer (EBL) in ultraviolet light-emitting diode (UV LED) is optimized by employing a linearly graded AlGaN inserting layer which is 2.0 nm Al0.3Ga0.7N/5.0 nm AlxGa1-xN/8.0 nm Al0.3Ga0.7N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes, which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition, the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.

Keywords:  ultraviolet light-emitting diode      electron blocking layer      internal quantum efficiency  
Received:  13 January 2019      Revised:  04 March 2019      Published:  05 May 2019
PACS:  85.60.Jb (Light-emitting devices)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  78.20.Bh (Theory, models, and numerical simulation) (Analytical theories)  

Project supported by the National Natural Science Foundation of China (Grant Nos. 61874161 and 11474105), the Science and Technology Program of Guangdong Province, China (Grant No. 2017B010127001), the Science and Technology Project of Shenzhen City, China (Grant No. GJHZ20180416164721073), and the Education Department Project Funding of Guangdong Province, China (Grant No. 2017KZDXM022).

Corresponding Authors:  Shu-Ti Li     E-mail:

Cite this article: 

Guang Li(李光), Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Jian Jiang(姜健), Xing-Jun Luo(罗幸君), Jia-Qi Guo(郭佳琦), Long-Fei He(贺龙飞), Kang Zhang(张康), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体) Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer 2019 Chin. Phys. B 28 058502

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