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Chin. Phys. B, 2019, Vol. 28(5): 057802    DOI: 10.1088/1674-1056/28/5/057802

Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer

Xuee An(安雪娥)1, Zhengjun Shang(商正君)1, Chuanhe Ma(马传贺)1, Xinhe Zheng(郑新和)2, Cuiling Zhang(张翠玲)3, Lin Sun(孙琳)1, Fangyu Yue(越方禹)1, Bo Li(李波)1, Ye Chen(陈晔)1
1 Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, China;
2 Department of Physics, Beijing University of Science and Technology, Beijing 100083, China;
3 Shanghai Key Laboratory of Green Chemistry and Chemical Processes, Department of Chemistry, School of Chemistry and Molecular Engineering, East China Normal University, Shanghai 200241, China

Temperature and excitation dependent photoluminescence (PL) of InGaN epilayer grown on c-plane GaN/sapphire template by molecular beam epitaxy (MBE) has been systematically investigated. The emission spectra of the sample consisted of strong multiple peaks associated with one stimulated emission (SE) located at 430 nm and two spontaneous emissions (SPE) centered at about 450 nm and 480 nm, indicating the co-existence of shallow and deep localized states. The peak energy of SE exhibiting weak s-shaped variation with increasing temperature revealed the localization effect of excitons. Moreover, an abnormal increase of the SPE intensity with increasing temperature was also observed, which indicated that the carrier transfer between the shallow and deeper localized states exists. Temperature dependent time-resolved PL (TRPL) demonstrated the carrier transfer processes among the localized states. In addition, a slow thermalization of hot carriers was observed in InGaN film by using TRPL and transient differential reflectivity, which is attributed to the phonon bottleneck effect induced by indium aggregation.

Keywords:  InGaN      stimulated emission      spontaneous emission      carrier transfer  
Received:  10 November 2018      Revised:  02 February 2019      Accepted manuscript online: 
PACS:  78.40.Fy (Semiconductors)  
  78.45.+h (Stimulated emission)  
  78.47.-p (Spectroscopy of solid state dynamics)  
  78.55.-m (Photoluminescence, properties and materials)  

Project supported by the National Key Research Program of China (Grant No. 2016YFB0501604) and the National Natural Science Foundation of China (Grant Nos. 10874127 and 61227902).

Corresponding Authors:  Bo Li, Ye Chen     E-mail:;

Cite this article: 

Xuee An(安雪娥), Zhengjun Shang(商正君), Chuanhe Ma(马传贺), Xinhe Zheng(郑新和), Cuiling Zhang(张翠玲), Lin Sun(孙琳), Fangyu Yue(越方禹), Bo Li(李波), Ye Chen(陈晔) Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer 2019 Chin. Phys. B 28 057802

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