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Chin. Phys. B, 2019, Vol. 28(4): 048501    DOI: 10.1088/1674-1056/28/4/048501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Effects of hole-injection through side-walls of large V-pits on efficiency droop in Ⅲ-nitride LEDs

Dong-Yan Zhang(张东炎)1,2, Jie Zhang(张洁)3, Xiao-Feng Liu(刘晓峰)1,2, Sha-Sha Chen(陈沙沙)1,2, Hui-Wen Li(李慧文)1,2, Ming-Qing Liu(刘明庆)1,2, Da-Qian Ye(叶大千)1,2, Du-Xiang Wang(王笃祥)1,2
1 Tianjin San'an Optoelectronics Co., Ltd, No. 20 Haitainan Road, Huayuan New Technology Industry Development Area, Tianjin 300384, China;
2 The Key Laboratory of Semiconductor LED Chip of Tianjin, No. 20 Haitainan Road, Huayuan New Technology Industry Development Area, Tianjin 300384, China;
3 Xiamen San'an Optoelectronics Technology Co., Ltd, No. 1721-1725, Luling Road, Xiamen 361009, China
Abstract  

Although the solid-state lighting market is growing rapidly, it is still difficult to obtain ultra-high brightness white light emitting diodes (LEDs). V-pits are inevitably introduced during the metalorganic chemical vapor deposition (MOCVD) growth of multiple quantum wells (MQWs) in Ⅲ-nitride LEDs, and thus affecting the carrier dynamics of the LEDs. Specifically designed structures are fabricated to study the influence of the V-pits on the hole transportation and efficiency droop, and double quantum wells (QWs) are used to monitor the transportation and distribution of holes based on their emission intensity. It is found that when compared with the planar QWs, the injection of holes into the QWs through the side walls of the V-pits changes the distribution of holes among the MQWs. This results in a higher probability of hole injection into the middle QWs and enhanced emission therein, and, consequently, a lower efficiency droop.

Keywords:  V-pits      efficiency droop      side-wall      injection  
Received:  09 October 2018      Revised:  11 February 2019      Published:  05 April 2019
PACS:  85.30.-z (Semiconductor devices)  
  66.70.Df (Metals, alloys, and semiconductors)  
  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
Fund: 

Project supported by the National Key Research and Development Project of China (Grant No. 2017YFB0403303) and the Key Technologies Research and Development Program of Tianjin, China (Grant Nos. 18YFZCGX00760 and 18YFZCGX00400).

Corresponding Authors:  Dong-Yan Zhang     E-mail:  dyzhang2012@sanan-e.com

Cite this article: 

Dong-Yan Zhang(张东炎), Jie Zhang(张洁), Xiao-Feng Liu(刘晓峰), Sha-Sha Chen(陈沙沙), Hui-Wen Li(李慧文), Ming-Qing Liu(刘明庆), Da-Qian Ye(叶大千), Du-Xiang Wang(王笃祥) Effects of hole-injection through side-walls of large V-pits on efficiency droop in Ⅲ-nitride LEDs 2019 Chin. Phys. B 28 048501

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