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Chin. Phys. B, 2019, Vol. 28(3): 037201    DOI: 10.1088/1674-1056/28/3/037201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate

Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园)
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
Abstract  

A stacked lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) with enhanced depletion effect by surface substrate is proposed (ST-LDMOS), which is compatible with the traditional CMOS processes. The new stacked structure is characterized by double substrates and surface dielectric trenches (SDT). The drift region is separated by the P-buried layer to form two vertically parallel devices. The doping concentration of the drift region is increased benefiting from the enhanced auxiliary depletion effect of the double substrates, leading to a lower specific on-resistance (Ron,sp). Multiple electric field peaks appear at the corners of the SDT, which improves the lateral electric field distribution and the breakdown voltage (BV). Compared to a conventional LDMOS (C-LDMOS), the BV in the ST-LDMOS increases from 259 V to 459 V, an improvement of 77.22%. The Ron,sp decreases from 39.62 mΩ·cm2 to 23.24 mΩ·cm2 and the Baliga's figure of merit (FOM) of is 9.07 MW/cm2.

Keywords:  double substrates      surface dielectric trench      stacked lateral double-diffused metal-oxide-semiconductor field-effect transistor (ST-LDMOS)      breakdown voltage  
Received:  11 September 2018      Revised:  18 December 2018      Published:  05 March 2019
PACS:  72.80.Cw (Elemental semiconductors)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 61464003) and the Guangxi Natural Science Foundation, China (Grant Nos. 2015GXNSFAA139300 and 2018JJA170010).

Corresponding Authors:  Yuan Zuo     E-mail:  juear615@outlook.com

Cite this article: 

Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园) Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate 2019 Chin. Phys. B 28 037201

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