| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate |
| Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园) |
| Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China |
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Abstract A stacked lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) with enhanced depletion effect by surface substrate is proposed (ST-LDMOS), which is compatible with the traditional CMOS processes. The new stacked structure is characterized by double substrates and surface dielectric trenches (SDT). The drift region is separated by the P-buried layer to form two vertically parallel devices. The doping concentration of the drift region is increased benefiting from the enhanced auxiliary depletion effect of the double substrates, leading to a lower specific on-resistance (Ron,sp). Multiple electric field peaks appear at the corners of the SDT, which improves the lateral electric field distribution and the breakdown voltage (BV). Compared to a conventional LDMOS (C-LDMOS), the BV in the ST-LDMOS increases from 259 V to 459 V, an improvement of 77.22%. The Ron,sp decreases from 39.62 mΩ·cm2 to 23.24 mΩ·cm2 and the Baliga's figure of merit (FOM) of is 9.07 MW/cm2.
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Received: 11 September 2018
Revised: 18 December 2018
Published: 05 March 2019
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PACS:
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72.80.Cw
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(Elemental semiconductors)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61464003) and the Guangxi Natural Science Foundation, China (Grant Nos. 2015GXNSFAA139300 and 2018JJA170010). |
Corresponding Authors:
Yuan Zuo
E-mail: juear615@outlook.com
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Cite this article:
Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园) Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate 2019 Chin. Phys. B 28 037201
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