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Chin. Phys. B, 2019, Vol. 28(2): 026801    DOI: 10.1088/1674-1056/28/2/026801
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

San-Jie Liu(刘三姐), Ying-Feng He(何荧峰), Hui-Yun Wei(卫会云), Peng Qiu(仇鹏), Yi-Meng Song(宋祎萌), Yun-Lai An(安运来), Abdul Rehman(阿布度-拉赫曼), Ming-Zeng Peng(彭铭曾), Xin-He Zheng(郑新和)
School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing(USTB), Beijing 100083, China
Abstract  Polycrystalline gallium nitride (GaN) thin films were deposited on Si (100) substrates via plasma-enhanced atomic layer deposition (PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si (100) interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si (100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy (HRTEM). However, an amorphous interfacial layer (~2 nm) can be observed from the HRTEM images, and is determined to be mixture of GaxOy and GaN by x-ray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.
Keywords:  gallium nitride      PEALD      sharp interface      x-ray reflectivity      high resolution transmission electron microscopy  
Received:  03 November 2017      Revised:  29 November 2018      Published:  05 February 2019
PACS:  68.35.bg (Semiconductors)  
  68.37.Og (High-resolution transmission electron microscopy (HRTEM))  
  68.55.Nq (Composition and phase identification)  
Fund: Project supported by the Fundamental Research Funds for the Central Universities (Grant Nos. FRF-BR-16-018A, FRF-TP-17-022A1, and FRF-TP-17-069A1), the National Natural Science Foundation of China (Grant Nos. 61274134 and 51402064), USTB Start-up Program (Grant No. 06105033), China Postdoctoral Science Foundation (Grant No. 2018M631333), Beijing Natural Science Foundation (Grant Nos. 2184112 and 4173077), Beijing Innovation and Research Base Fund (Grant No. Z161100005016095), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2015387).
Corresponding Authors:  Ming-Zeng Peng, Xin-He Zheng     E-mail:  mzpeng@ustb.edu.cn;xinhezheng@ustb.edu.cn

Cite this article: 

San-Jie Liu(刘三姐), Ying-Feng He(何荧峰), Hui-Yun Wei(卫会云), Peng Qiu(仇鹏), Yi-Meng Song(宋祎萌), Yun-Lai An(安运来), Abdul Rehman(阿布度-拉赫曼), Ming-Zeng Peng(彭铭曾), Xin-He Zheng(郑新和) PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces 2019 Chin. Phys. B 28 026801

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