Characteristics and threshold voltage model of GaN-based FinFET with recessed gate

doi:10.1088/1674-1056/27/9/097308

Abstract

In this work, AlGaN/GaN FinFETs with different fin widths have been successfully fabricated, and the recessed-gate FinFETs are fabricated for comparison. The recessed-gate FinFETs exhibit higher transconductance value and positive shift of threshold voltage. Moreover, with the fin width of the recessed-gate FinFETs increasing, the variations of both threshold voltage and the transconductance increase. Next, transfer characteristics of the recessed-gate FinFETs with different fin widths and recessed-gate depths are simulated by Silvaco software. The relationship between the threshold voltage and the AlGaN layer thickness has been investigated. The simulation results indicate that the slope of threshold voltage variation reduces with the fin width decreasing. Finally, a simplified threshold voltage model for recessed-gate FinFET is established, which agrees with both the experimental results and simulation results.

Keywords: AlGaN/GaN FinFET recessed gate threshold voltage

Received: 27 March 2018
Revised: 05 June 2018
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	52.77.Bn	(Etching and cleaning)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund:

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400 300) and the National Natural Science Foundation of China (Grant Nos. 61574110, 61574112, and 61474091).

Corresponding Authors: Chong Wang
E-mail: chongw@xidian.edu.cn

Cite this article:

Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) Characteristics and threshold voltage model of GaN-based FinFET with recessed gate 2018 Chin. Phys. B 27 097308

[1]	Chow T P and Tyagi R 1994 IEEE T. Electron. Dev. 41 1481
[2]	Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 90 1022
[3]	Liu T T, Zhang K, Zhu G R, Zhou J J, Kong Y C, Yu X X, Yu X X and Chen T S 2018 Chin. Phys. B 27 047307
[4]	Jo Y W, Son D H, Won C H, Sindhuri V, Kim J H, Seo J H and Kang I M 2015 Int. Conf. Power Electron. Drive Syst. June 9-12, Sydney, Australia, p. 684
[5]	Liu S H, Cai Y, Gu G D, Wang J Y, Zeng C H, Shi W H, Feng Z H, Qin H, Cheng Z Q, Chen K J and Zhang B S 2012 IEEE Electron. Dev. Lett. 33 354
[6]	Lanford W B, Tanaka T, Otoki Y and Adesida I 2005 Electron. Lett. 41 449
[7]	Yoo G M, Seo J H, Yoon Y J, Kim Y J, Kim S Y, Kang H S, Eun H R, Kwon R H, Jang Y I and Kang I M 2014 IEEE Int. Symp. Consumer Electrons, June 22-25, JeJu Island, South Korea, p. 1
[8]	Yadav C, Kushwaha P, Khandelwal S, Duarte J P, Chauhan Y S and Hu C 2014 IEEE Electron. Dev. Lett. 35 612
[9]	He Y L, Zhai S P, Mi M H, Zhou X W, Zheng X F, Zhang M, Zhang P, Yang L, Wang C, Ma X H and Hao Y 2017 Phys. Status Solidi (a) 214 1600504
[10]	Lee D S, Wang H, Hsu A, Azize M, Laboutin O, Cao Y, Johnson J W, Beam E, Ketterson A, Schuette M L, Saunier P and Palacios T 2013 IEEE Electron. Dev. Lett. 34 969
[11]	Zhang K, Kong Y C, Zhu G R, Zhou J J, Yu X X, Kong C, Li Z H and Chen T S 2017 IEEE Electron. Dev. Lett. 38 615
[12]	Binari S C, Ikossi K, Roussos J A and Kruppa W 2001 IEEE T. Electron. Dev. 48 465
[13]	Stengel F, Mohammad S N and Morkoc H 1996 J. Appl. Phys. 80 3031
[14]	Saito W, Takada Y, Kuraguchi M, Tsuda K and Omura I 2006 IEEE T. Electron. Dev. 53 356

[1]	Design and research of normally-off β-Ga₂O₃/4H-SiC heterojunction field effect transistor Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Chin. Phys. B, 2023, 32(3): 037302.
[2]	Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Chin. Phys. B, 2023, 32(3): 037201.
[3]	Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢). Chin. Phys. B, 2023, 32(1): 018506.
[4]	Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)^†. Chin. Phys. B, 2022, 31(9): 096101.
[5]	Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(6): 068501.
[6]	Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N₂O radical treatment Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 057301.
[7]	Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰). Chin. Phys. B, 2022, 31(5): 056106.
[8]	Combined effects of cycling endurance and total ionizing dose on floating gate memory cells Si-De Song(宋思德), Guo-Zhu Liu(刘国柱), Qi He(贺琪), Xiang Gu(顾祥), Gen-Shen Hong(洪根深), and Jian-Wei Wu(吴建伟). Chin. Phys. B, 2022, 31(5): 056107.
[9]	Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 058505.
[10]	High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(2): 027301.
[11]	High linearity AlGaN/GaN HEMT with double-V_th coupling for millimeter-wave applications Pengfei Wang(王鹏飞), Minhan Mi(宓珉瀚), Meng Zhang(张濛), Jiejie Zhu(祝杰杰), Yuwei Zhou(周雨威), Jielong Liu(刘捷龙), Sijia Liu(刘思佳), Ling Yang(杨凌), Bin Hou(侯斌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(2): 027103.
[12]	Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Chin. Phys. B, 2022, 31(12): 127701.
[13]	Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌). Chin. Phys. B, 2022, 31(12): 126103.
[14]	Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华). Chin. Phys. B, 2022, 31(11): 117301.
[15]	A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(11): 117105.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Characteristics and threshold voltage model of GaN-based FinFET with recessed gate

Cite this article:

Online attention