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Chin. Phys. B, 2018, Vol. 27(8): 088106    DOI: 10.1088/1674-1056/27/8/088106

Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors

Liu-Hong Ma(马刘红)1,3, Wei-Hua Han(韩伟华)2,3, Xiao-Song Zhao(赵晓松)2,3, Yang-Yan Guo(郭仰岩)2,3, Ya-Mei Dou(窦亚梅)2,3, Fu-Hua Yang(杨富华)3,4
1 School of Physical Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus-doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.
Keywords:  junctionless nanowire transistor      quantum transport      Hubbard band      quantum dot     
Received:  15 March 2018      Published:  05 August 2018
PACS:  81.07.Gf (Nanowires)  
  73.63.-b (Electronic transport in nanoscale materials and structures)  
  73.40.-c (Electronic transport in interface structures)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126).
Corresponding Authors:  Wei-Hua Han, Fu-Hua Yang     E-mail:;

Cite this article: 

Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华) Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors 2018 Chin. Phys. B 27 088106

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