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Chin. Phys. B, 2018, Vol. 27(8): 087102    DOI: 10.1088/1674-1056/27/8/087102

Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes

Xue-Qian Zhong(仲雪倩)2, Jue Wang(王珏)1, Bao-Zhu Wang(王宝柱)2, Heng-Yu Wang(王珩宇)2, Qing Guo(郭清)2, Kuang Sheng(盛况)2
1 College of Information and Electrical Engineering, Zhejiang University City College, Hangzhou 310015, China;
2 College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China
Abstract  Mesa width (WM) is a key design parameter for SiC super junction (SJ) Schottky diodes (SBD) fabricated by the trench-etching-and-sidewall-implant method. This paper carries out a comprehensive investigation on how the mesa width design determines the device electrical performances and how it affects the degree of performance degradation induced by process variations. It is found that structures designed with narrower mesa widths can tolerant substantially larger charge imbalance for a given BV target, but have poor specific on-resistances. On the contrary, structures with wider mesa widths have superior on-state performances but their breakdown voltages are more sensitive to p-type doping variation. Medium WM structures (~2 μ) exhibit stronger robustness against the process variation resulting from SiC deep trench etching. Devices with 2-μ mesa width were fabricated and electrically characterized. The fabricated SiC SJ SBDs have achieved a breakdown voltage of 1350 V with a specific on-resistance as low as 0.98 mΩ·cm2. The estimated specific drift on-resistance by subtracting substrate resistance is well below the theoretical one-dimensional unipolar limit of SiC material. The robustness of the voltage blocking capability against trench dimension variations has also been experimentally verified for the proposed SiC SJ SBD devices.
Keywords:  silicon carbide      super junction      Schottky diode      trench etching  
Received:  01 March 2018      Revised:  03 June 2018      Accepted manuscript online: 
PACS:  71.20.Nr (Semiconductor compounds)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187).
Corresponding Authors:  Jue Wang     E-mail:

Cite this article: 

Xue-Qian Zhong(仲雪倩), Jue Wang(王珏), Bao-Zhu Wang(王宝柱), Heng-Yu Wang(王珩宇), Qing Guo(郭清), Kuang Sheng(盛况) Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes 2018 Chin. Phys. B 27 087102

[1] Bolotnikov A, Losee P, Permuy A, Dunne G, Kennerly S, Rowden B, Nasadoski J, Harfman M, Raju R, Tao F, Cioffi P and Mueller F J and Stevanovic 2015 Proc 2015 Ann. Appl. Power Electron. Conf. Exposit., March 15-19, 2015, p. 2445
[2] Wang X D, Deng X C, Wang Y W, Wang Y, Wen Y and Zhang B 2014 Chin. Phys. B 23 057203
[3] Chen S Z and Sheng K 2014 Chin. Phys. B 23 077201
[4] Song Q W, Tang X Y, Yuan H, Wang Y H, Zhang Y M, Guo H, Jia R X, Lv H L, Zhang Y M and Zhang Y M 2016 Chin. Phys. B 25 047102
[5] Cooper J A, Tamaki T, Walden G, Sui Y, Wang S R and Wang X 2009 Proc. IEEE IEDM, December 7-9, 2009, p. 1
[6] Yu L C and Sheng K 2006 Solid-Stat. Electron 50 1062
[7] Yu L C and Sheng K 2008 IEEE Trans. Electron Dev. 55 1961
[8] Nishio J, Ota C, Hataketama T, Shinohe T, Kojima K, Nishizawa S and Ohashi H 2008 IEEE Trans. Electron Dev. 55 1954
[9] Kosugi R, Sakuma Y, Kojima K, Itoh S, Nagata A, Tatsuo T, Tanaka Y and Okumura H 2014 Proc. 26th Int. Symp. Power Semicond. Devices ICs, June 15-19, 2014, p. 346
[10] Zhong X Q, Wang B Z and Sheng K 2016 Proc. 28th Int. Symp. Power Semicond. Devices ICs, June 12-16, 2016, p. 231
[11] Masuda T, Kosugi R and Hiyoshi T 2017 Mater. Sci. Forum 897 483
[12] Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Yoshioka H, Okumura H, Yamaguchi M and Ogura T 2006 Proc. 18th Int. Symp. Power Semicond. Devices ICs, June 4-8, 2006, p. 18
[13] Sakakibara J, Noda Y, Shibata T, Nogami S, Yamaoka T and Yamaguchi H 2008 Proc. 20th Int. Symp. Power Semicond. Devices ICs, May, 18-22, 2008, p. 299
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