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Chin. Phys. B, 2018, Vol. 27(5): 057702    DOI: 10.1088/1674-1056/27/5/057702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effect of oxygen content on dielectric characteristics of Cr-doped LaTiOx

Ming Ma(马铭)1, Yan Chen(陈彦)2, Yi-Min Cui(崔益民)2
1 School of Aeronautic Science and Engineering, Beihang University, Beijing 100191, China;
2 School of Physics, Beihang University, Beijing 100191, China
Abstract  The ceramics La0.85Cr0.15TiOx and La0.7Cr0.3TiOx are prepared by conventional solid-state reaction method. The dielectric properties of Cr-doped LaTiOx as a function of frequency (0.1 kHz ≤ f ≤ 1 MHz) and temperature (77 K ≤ T ≤ 360 K) are studied. The blocks are then annealed in a flowing O2 or Ar/H2 to convert their oxygen content and the tests mentioned above are performed. The highly oxygenated samples exhibit extremely high low-frequency dielectric constants at room temperature (~106). The results show that the oxygen stoichiometry could significantly influence the dielectric properties of Cr-doped LaTiOx.
Keywords:  oxygen content      dielectric characteristics      LaTiOx  
Received:  16 December 2017      Revised:  17 January 2018      Accepted manuscript online: 
PACS:  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
  77.22.Gm (Dielectric loss and relaxation)  
  61.72.-y (Defects and impurities in crystals; microstructure)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No.51571006).
Corresponding Authors:  Yan Chen     E-mail:  chenyan@buaa.edu.cn

Cite this article: 

Ming Ma(马铭), Yan Chen(陈彦), Yi-Min Cui(崔益民) Effect of oxygen content on dielectric characteristics of Cr-doped LaTiOx 2018 Chin. Phys. B 27 057702

[1] Ahn C H, Triscone J M and Mannhart J 2003 Nature 424 1015
[2] Cheng J G, Meng X J, Li B, Tang J, Guo S L and Chu J H 1999 Appl. Phys. Lett. 75 2132
[3] Maurya D, Pramanick A, An K and Priya S 2012 Appl. Phys. Lett. 100 172906
[4] Suzuki H, Bando H, Ootuka Y, Inoue I, Yamamoto T, Takahashi K and Nishihara Y 1999 J. Phys. Soc. Jpn. 65 1529
[5] Moetakef P, Zhang J Y, Kozhanov A, Jalan B, Seshadri R, Allen S J and Stemmer S 2011 Appl. Phys. Lett. 98 112110
[6] Schmehl A, Lichtenberg F, Bielefeldt H, Mannhart J and Schlom D G 2003 Appl. Phys. Lett. 82 3077
[7] Schmitz R, Entin-wohlman O, Aharony A, Harris A B and Muellerhartmann E 2005 Phys. Rev. B 71 144412
[8] Lunkenheimer P, Rudolf T, Hemberger J, Pimenov A, Tachos S, Lichtenberg F and Loidl A 2003 Phys. Rev. B 68 245108
[9] Madhavan B and Ashok A 2015 J. Sol-Gel Sci. Technol. 73 1
[10] Fasquele D, Carru J C, Gendre L L, Paven C L, Pinel J, Cheviré F, Tessier F and Marchand R 2005 J. Eur. Ceram. Soc. 25 2085
[11] Chen Y, Xu J X, Cui Y M, Shang G Y, Qian J Q and Yao J E 2016 Prog. Nat. Sci.:Mater. Int. 26 158
[12] ZhangL L, Nie Y L, Hu C and Qu J H 2012 Appl. Catal. B 125 418
[13] Gao L H, Ma Z and Fan Q B 2011 J. Electroceram. 27 114
[14] Bradha M, Hussain S, Chakravarty S, Ashok A and Amarendra G 2014 Ionics 20 1343
[15] Kim J K, Sang S S and Kim W J 2006 Appl. Phys. Lett. 88 132901
[16] Janousch M, MeijerG I, Staub U, Delley B, Karg S F and Andreasson B P 2007 Adv. Mater. 19 2232
[17] Borgarello E, Kiwi J, Graetzel M, Pelizzetti E and Visca M 1982 J. Am. Chem. Soc. 104 2996
[18] Shi S, Liu L, Ouyang C, Wang D S, Huang X J and Chen L Q 2003 Phys. Rev. B 68 195108
[19] Watanabe Y, Bednorz J G, Bietsch A, Gerber C, Widmer D and Beck A 2001 Appl. Phys. Lett. 78 3738
[20] Chen Y H, Zhao Y M, An X N, Liu J M, Dong Y Z and Chen L 2009 Electrochim. Acta 54 5844
[21] ChangW, Horwitz J S, Carter A C, Pond J M, Kirchoefer SW, Gilmore C M and Chrisey D B 1999 Appl. Phys. Lett. 74 1033
[22] Lee M K, Huang J J and Wu T S 2005 Semicond. Sci. Technol. 20 519
[23] Cui Y M, Zhang L W, Wang C C, Shi K and Cao B S 2006 J. Magn. Magn. Mater. 297 21
[24] Bamzai K K, Koohpayeh S M, Kaur B, Fort D and Abell J S 2008 Ferroelectrics 377 1
[25] Cui Y M and Wang R M 2007 Appl. Phys. Lett. 91 233513
[26] Cui Y M, Cai W, Li Y, Qian J Q, Xu P, Wang R M and Yao J E 2006 J. Appl. Phys. 100 034101
[27] Chen C, Xu K B, Cui Y M and Wang C C 2012 Mater. Lett. 89 153
[28] Lu C and Cui Y M 2012 Physica B 407 3856
[29] Xu J X and Cui Y M 2013 Mater. Sci. Eng. B 178 316
[30] Cui Y M, Zhang L W, Xie C L and Wang R M 2006 Solid State Commun. 138 481
[31] Cui Y M, Zhang L W and Wang R M 2006 Physica C 442 29
[32] Cui Y M, Liu W and Wang R M 2013 Phys. Chem. Chem. Phys. 15 6804
[33] Jr E R N 1959 Biochim. Biophys. Acta 63 1381
[34] Vidyasagar C C, Muralidhara H B, Naik Y A, Gururaj H and Ilango M S 2015 Energy Environ. Focus 4 54
[35] López G P, Castner D G, Ratner B D 1991 Surf. Interface Anal. 17 267
[36] Miao J P, Lü Z, Li L P, Ning F L, Liu Z G, Huang X Q, Sui Y, Qian Z N, Su W H 2000 Mater. Lett. 427 267
[37] Marshall M S J, Newell D T, Payne D K, Egdell R G and Castell M R 2011 Phys. Rev. B 83 035410
[38] Daulton T L and Little B J 2006 Ultramicroscopy 106 561
[39] Zhong L, Cai W and Zhong Q 2014 Rsc Adv. 4 43529
[40] Drera G, Salvinelli G, Brinkman A, Huijben M, Koster G, Hilgenkamp H, Rijnders G, Visentin D and Sangaletti L 2012 Phys. Rev. B 87 1081
[41] Zhou Y, Chen C H, Wang N N, Li Y Y and Ding H M 2016 J. Phys. Chem. C 120 6116
[42] Guillemot F, Porte M C, Labrugere C and Baquey C H 2002 J. Colloid Interface Sci. 255 75
[43] Dholam R, Patel N, Adami M and Miotello A 2009 Int. J. Hydrogen Energy 34 5337
[44] Pesci F M, Wang G, KlugDR, Li Y and Cowan A J 2013 J. Phys. Chem. C 117 25837
[45] Wang G J, Wang C C, Huang S G, Lei C M, Mei J Y, Sun X H and Li T 2012 J. Electroceram. 28 172
[46] Zhang Y T, Wang C C and He M 2009 J. Phys. D:Appl. Phys. 42 055309
[47] Lichtenberg F, Widmer D, Bednorz J G, Williams T and Reller A 1991 Z. Phys. B 82 211
[48] Chang F G, Song G L, Fang K and Wang Z K 2007 Acta Phys. Sin. 56 6068
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