Influence of spin-orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

doi:10.1088/1674-1056/27/4/047201

Abstract Influence of spin-orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically. It is shown that the Rashba spin-orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier's Fermi wavelength. When there are more than one domain wall presented in a magnetic semiconductor nanowire, not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport, and in such cases the influences of the Rashba spin-orbit coupling will depend sensitively both on the domain walls' width and the domain walls' separation.

Keywords: magnetic semiconductor nanowires domain wall spin-orbit coupling spin-polarized electronic transport

Received: 22 October 2017
Revised: 14 January 2018
Accepted manuscript online:

PACS:	72.10.Bg	(General formulation of transport theory)
	72.25.Dc	(Spin polarized transport in semiconductors)
	72.25.Ba	(Spin polarized transport in metals)
	72.15.-v	(Electronic conduction in metals and alloys)

Corresponding Authors: Liang-Bin Hu
E-mail: lbhu26@126.com

Cite this article:

Lian Liu(刘恋), Wen-Xiang Chen(陈文祥), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾) Influence of spin-orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls 2018 Chin. Phys. B 27 047201

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Influence of spin-orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

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