Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

doi:10.1088/1674-1056/27/3/038501

Abstract In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up (SEL) sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset (MCU) is the parasitic bipolar amplification, it bring us to study the impact of neutron irradiation on the SRAM's MCU sensitivity. After the neutron experiment, we test the devices' function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices' MCU sensitivity pre-and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse. Finally, we use the electric static discharge (ESD) testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.

Keywords: displacement damage neutron irradiation multiple cell upset (MCU) parasitic bipolar amplification

Received: 06 September 2017
Revised: 06 December 2017
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	61.80.-x	(Physical radiation effects, radiation damage)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Corresponding Authors: Hongxia Guo
E-mail: guohxnint@126.com

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Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利) Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation 2018 Chin. Phys. B 27 038501

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Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

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