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Chin. Phys. B, 2018, Vol. 27(12): 128501    DOI: 10.1088/1674-1056/27/12/128501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xin Xie(解鑫)1,2, Da-Wei Bi(毕大伟)1, Zhi-Yuan Hu(胡志远)1, Hui-Long Zhu(朱慧龙)1,2, Meng-Ying Zhang(张梦映)1,2, Zheng-Xuan Zhang(张正选)1, Shi-Chang Zou(邹世昌)1
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  

The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect. However, the back-gate curves' measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the back-gate curves' measurement, which are:Fowler-Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling. The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves' measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.

Keywords:  total ionizing dose (TID)      silicon-on-insulator (SOI)      measurement sequence      tunneling effect  
Received:  16 August 2018      Revised:  17 September 2018      Published:  05 December 2018
PACS:  85.30.-z (Semiconductor devices)  
  61.80.-x (Physical radiation effects, radiation damage)  
  07.87.+v (Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Corresponding Authors:  Xin Xie     E-mail:  xiexin@mail.sim.ac.cn

Cite this article: 

Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET 2018 Chin. Phys. B 27 128501

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