Please wait a minute...
Chin. Phys. B, 2018, Vol. 27(12): 127805    DOI: 10.1088/1674-1056/27/12/127805
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas

Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏)
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
Abstract  

Indium-composition fluctuations in InGaN epitaxial layers are suppressed by using periodically-pulsed mixture (PPM) of N2 and H2 carrier gas. Photoluminescence, optical transmission, reciprocal space map and space-resolved cathodoluminescence are employed to characterize the InGaN epilayers. It is shown that the lateral In-fluctuations mainly occur as hillock-like In-rich regions. Both the number and size of In-rich regions are reduced by introducing the PPM carrier gas. Moreover, the measurements first experimentally demonstrate that the H2 carrier gas has a stronger decomposition effect on the In-rich region. As the duration time of the PPM carrier gas increases, the reduction of In-content in the In-rich region reaches up to 12%, however, only 2% for the In-homogeneous region. These factors lead to the suppression of In-fluctuations.

Keywords:  InGaN alloys      suppression of In-fluctuations      periodically-pulsed mixture of nitrogen and hydrogen  
Received:  04 July 2018      Revised:  16 September 2018      Accepted manuscript online: 
PACS:  78.55.Cr (III-V semiconductors)  
  81.05.Ea (III-V semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
Fund: 

Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Corresponding Authors:  Hao Jiang     E-mail:  stsjiang@mail.sysu.edu.cn

Cite this article: 

Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏) Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas 2018 Chin. Phys. B 27 127805

[1] Chin V W L, Zhou B, Tansley T L and Li X 1995 J. Appl. Phys. 77 6064
[2] Bae S Y, Song Y H, Jeon S R, Kim D M, Jho Y D and Lee D S 2014 J. Cryst. Growth 387 23
[3] Tong J H, Li S T, Lu T P, Liu C, Wang H L, Wu L J, Zhao B J, Wang X F and Chen X 2012 Chin. Phys. B 21 118502
[4] Czernecki R, Kret S, Kempisty P, Grzanka E, Plesiewicz J, Targowski G, Grzanka S, Bilska M, Smalc-Koziorowska M, Krukowski S, Suski T, Perlin P and Leszczynski M 2014 J. Cryst. Growth 402 330
[5] Gokarna A, Gauthier-Brun A, Liu W, Androussi Y, Dumont E, Dogheche E, Teng J H, Chua S J and Decoster D 2010 Appl. Phys. Lett. 96 191909
[6] Pantha B N, Dahal R, Li J, Lin J Y, Jiang H X and Pomrenke G 2008 Appl. Phys. Lett. 92 042112
[7] Gmili Y E, Orsal G, Pantzas K, Moudakir T, Sundaram S, Patriarche G, Hester J, Ahaitouf A, Salvestrini J P and Ougazzaden A 2013 Acta Mater. 61 6587
[8] Pantha B N, Li J, Lin J Y and Jiang H X 2008 Appl. Phys. Lett. 93 182107
[9] Karpov S Y 1998 MRS Internet J. Nitride Semicond. Res. 3 16
[10] El-Masry N A, Piner E L, Liu S X and Bedair S M 1998 Appl. Phys. Lett. 72 40
[11] Kang J H, Ebaid M, Lee J K and Ryu S W 2015 Appl. Phys. A 121 765
[12] Ozaki T, Takagi Y, Nishinaka J, Funato M and Kawakami Y 2014 Appl. Phys. Express 7 091001
[13] Li N, Wang S J, Park E H, Feng Z C, Tsai H L, Yang J R and Ferguson I 2009 J. Cryst. Growth 311 4628
[14] Pantha B N, Li J, Lin J Y and Jiang H X 2010 Appl. Phys. Lett. 96 232105
[15] Pantzas K, Gmili Y E, Dickerson J, Gautier S, Largeau L, Mauguin O, Patriarche G, Suresh S, Moudakir T, Bishop C, Ahaitouf A, Rivera T, Tanguy C, Voss P L and Ougazzaden A 2013 J. Cryst. Growth 370 57
[16] Pantzas K, Patriarche G, Troadec D, Kociak M, Cherkashin N, Hytch M, Barjon J, Tanguy C, Rivera T, Suresh S and Ougazzaden A 2015 J. Appl. Phys. 117 055705
[17] Moseley M, Lowder J, Billingsley D and Doolittle W A 2010 Appl. Phys. Lett. 97 191902
[18] Moseley M, Gunning B, Greenlee J, Lowder J, Namkoong G and Doolittle W A 2012 J. Appl. Phys. 112 014909
[19] Woo H, Jo H, Kim J, Cho S, Jo Y, Roh C H, Lee J H, Seo Y, Park J, Kim H, Hahn C K and Im H 2017 Curr. Appl. Phys. 17 1142
[20] Suihkonen S, Lang T, Svensk O, Sormunen J, Torma P T, Sopanen M, Lipsanen H, Odnoblyudov M A and Bougrov V E 2007 J. Crysl. Growth 300 324
[21] Ting S M, Ramer J C, Florescu D I, Merai V N, Albert B E, Parekh A, Lee D S, Lu D, Christini D V, Liu L and Armour E A 2003 J. Appl. Phys. 94 1461
[22] Moon Y T, Kim D J, Song K M, Choi C J, Han S H, Seong T Y and Park S J 2001 J. Appl. Phys. 89 6514
[23] Piner E L, Behbehani M K, El-Masry N A, Mclntosh F G, Roberts J C, Boutros K S and Bedair S M 1997 Appl. Phys. Lett. 70 461
[24] Bosi M and Fornari R 2004 J. Cryst. Growth 265 434
[25] Piner E L, Behbehani M K, El-Masry N A, Roberts J C, Mclntosh F G and Bedair S M 1997 Appl. Phys. Lett. 71 2023
[26] Sumiya M, Toyomitsu N, Nakano Y, Wang J, Harada Y, Sang L, Sekiguchi T, Yamaguchi T and Honda T 2017 APL Mater. 5 016105
[27] Namvar E and Fattahi M 2008 J. Lumin. 128 155
[28] Laws G M, Larkins E C, Harrison I, Molloy C and Someford D 2001 J. Appl. Phys. 89 1108
[29] Swanepoel R 1983 J. Phys. E: Sci. Instrum. 16 1214
[30] Marquez E, Ramirez-Malo J, Villares P, Jimenez-Garay R, Ewen P J S and Owen A E 1992 J. Phys. D: Appl. Phys. 25 535
[31] Chen Z Z, Qin Z X, Hu X D, Yu T J, Yang Z J, Tong Y Z, Ding X M and Zhang G Y 2004 Physica B 344 292
[32] Dobrovolskas D, Mickevicius J, Nargelas S, Vaitkevicius A, Nanishi Y, Araki T and Tamulaitis G 2017 Semicond. Sci. Technol. 32 025012
[33] Tao T, Zhi T, Liu B, Li Y, Zhuang Z, Xie Z, Chen D, Chen P, Zhang R and Zheng Y 2014 Phys. Status Solidi A 211 2823
[34] Liu J, Liang H, Xia X, Liu Y, Liu J, Abbas Q, Shen R, Luo Y, Zhang Y and Du G 2017 Cryst. Growth 17 3411
[35] Kryzhanovskaya N V, Lundin W V, Nikolaev A E, Tsatsulnikov A F, Sakharov A V, Pavlov M M, Cherkachin N A, Hytch M J, Valkovsky G A, Yagovkina M A and Usov S O 2010 Semiconductors 44 828
[36] Koukitu A, Taki T, Takahashi N and Seki H 1999 J. Cryst. Growth 197 99
[37] Koleske D D, Wierer Jr J J, Fischer A J and Lee S R 2014 J. Cryst. Growth 390 38
[38] Pereira S, Correia M R, Pereira E, O'Donnell K P, Alves E, Sequeira A D, Francol N, Watson M and Deatcher C J 2002 Appl. Phys. Lett. 80 3913
[1] Mid-infrared supercontinuum generation and its application on all-optical quantization with different input pulses
Yan Li(李妍), Xinzhu Sang(桑新柱). Chin. Phys. B, 2019, 28(5): 054206.
[2] Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal
Ding Yu(余丁), Guiying Shen(沈桂英), Hui Xie(谢辉), Jingming Liu(刘京明), Jing Sun(孙静), Youwen Zhao(赵有文). Chin. Phys. B, 2019, 28(5): 057102.
[3] High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
Jin-Ming Shang(尚金铭), Jian Feng(冯健), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Yi Zhang(张一), Cun-Zhu Tong(佟存柱), Yu Zhang(张宇), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2019, 28(3): 034202.
[4] High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars
Sheng-Wen Xie(谢圣文), Yu Zhang(张宇), Cheng-Ao Yang(杨成奥), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Yi Zhang(张一), Jin-Ming Shang(尚金铭), Fu-Hui Shao(邵福会), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2019, 28(1): 014208.
[5] Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm
Yi Zhang(张一), Fu-Hui Shao(邵福会), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Jin-Ming Shang(尚金铭), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2018, 27(12): 124207.
[6] Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures
Shuang-Tao Liu(刘双韬), Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Yuan Peng(彭莉媛), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫). Chin. Phys. B, 2018, 27(12): 127803.
[7] Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate
Bin Zhao(赵斌), Wei Hu(胡巍), Xian-Sheng Tang(唐先胜), Wen-Xue Huo(霍雯雪), Li-Li Han(韩丽丽), Ming-Long Zhao(赵明龙), Zi-Guang Ma(马紫光), Wen-Xin Wang(王文新), Hai-Qiang Jia(贾海强), Hong Chen(陈弘). Chin. Phys. B, 2018, 27(4): 047803.
[8] Magneto-optical properties of self-assembled InAs quantum dots for quantum information processing
Jing Tang(唐静), Xiu-Lai Xu(许秀来). Chin. Phys. B, 2018, 27(2): 027804.
[9] The residual C concentration control for low temperature growth p-type GaN
Shuang-Tao Liu(刘双韬), De-Gang Zhao(赵德刚), Jing Yang(杨静), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Xiang Li(李翔), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Qun Zhang(张立群). Chin. Phys. B, 2017, 26(10): 107102.
[10] N-type GaSb single crystals with high below-band gap transmission
Yong-Biao Bai(白永彪), You-Wen Zhao(赵有文), Gui-Ying Shen(沈桂英), Xiao-Yu Chen(陈晓玉), Jing-Ming Liu(刘京明), Hui Xie(谢晖), Zhi-Yuan Dong(董志远), Jun Yang(杨俊), Feng-Yun Yang(杨凤云), Feng-Hua Wang(王凤华). Chin. Phys. B, 2017, 26(10): 107801.
[11] Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm
Yong-Zhou Xue(薛永洲), Ze-Sheng Chen(陈泽升), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川), De-Sheng Jiang(江德生), Xiu-Ming Dou(窦秀明), Bao-Quan Sun(孙宝权). Chin. Phys. B, 2017, 26(8): 084202.
[12] Spectral dynamical behavior in two-section, quantum well, mode-locked laser at 1.064μm
Si-Hang Wei(魏思航), Ben Ma(马奔), Ze-Sheng Chen(陈泽升), Yong-Ping Liao(廖永平), Hong-Yue Hao(郝宏玥), Yu Zhang(张宇), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2017, 26(7): 074208.
[13] Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer
Wei Li(李维), Peng Jin(金鹏), Wei-Ying Wang(王维颖), De-Feng Mao(毛德丰), Xu Pan(潘旭), Xiao-Liang Wang(王晓亮), Zhan-Guo Wang(王占国). Chin. Phys. B, 2017, 26(7): 077802.
[14] Structural characterization of Al0.55Ga0.45N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy
Qing-Jun Xu(徐庆君), Bin Liu(刘斌), Shi-Ying Zhang(张士英), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Chin. Phys. B, 2017, 26(4): 047801.
[15] Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Chin. Phys. B, 2017, 26(2): 027801.
No Suggested Reading articles found!