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Chin. Phys. B, 2018, Vol. 27(10): 108504    DOI: 10.1088/1674-1056/27/10/108504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons

Hong Zhao(赵虹)1, Dan-Dan Peng(彭丹丹)1, Jun He(何军)1, Xin-Mei Li(李新梅)1, Meng-Qiu Long(龙孟秋)1,2
1 Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China;
2 Institute of Low-dimensional Quantum Materials and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
Abstract  

In this article, the spin-dependent electronic and transport properties of the armchair boron-phosphorous nanoribbons (ABPNRs) are mainly studied by using the non-equilibrium Green function method combined with the spin-polarized density function theory. Our calculated electronic structures indicate that the edge hydrogenated ABPNRs exhibit a ferromagnetic bipolar magnetic semiconductor property, and that the Si atom doping can make ABPNRs convert into up-spin dominated half metal. The spin-resolved transport property results show that the doped devices can realize 100% spin-filtering function, and that the interesting negative differential resistance phenomenon can be observed. Our calculations suggest that the ABPNRs can be constructed as a spin heterojunction by introducing Si doping partially, and it would be used as a spin-diode for nano-spintronics in future.

Keywords:  armchair boron-phosphorous nanoribbon      Si doping      bipolar magnetic semiconductor property      negative differential resistance  
Received:  01 July 2018      Revised:  24 July 2018      Accepted manuscript online: 
PACS:  85.35.-p (Nanoelectronic devices)  
  73.63.-b (Electronic transport in nanoscale materials and structures)  
  75.75.-c (Magnetic properties of nanostructures)  
  72.15.Nj (Collective modes (e.g., in one-dimensional conductors))  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 21673296), the Hunan Provincial Natural Science Foundation of China (Grant No. 2018JJ2481), and the Fundamental Research Funds for the Central Universities of Central South University, China (Grant No. 2018zzts328).

Corresponding Authors:  Jun He, Meng-Qiu Long     E-mail:  junhe@csu.edu.cn;mqlong@csu.edu.cn

Cite this article: 

Hong Zhao(赵虹), Dan-Dan Peng(彭丹丹), Jun He(何军), Xin-Mei Li(李新梅), Meng-Qiu Long(龙孟秋) Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons 2018 Chin. Phys. B 27 108504

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