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Chin. Phys. B, 2017, Vol. 26(9): 097104    DOI: 10.1088/1674-1056/26/9/097104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Yan Liu(刘艳)1, Zhao-Jun Lin(林兆军)1, Yuan-Jie Lv(吕元杰)2, Peng Cui(崔鹏)1, Chen Fu(付晨)1, Ruilong Han(韩瑞龙)1, Yu Huo(霍宇)1, Ming Yang(杨铭)1
1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Abstract  The parasitic source resistance (RS) of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) is studied in the temperature range 300-500 K. By using the measured RS and both capacitance-voltage (C-V) and current-voltage (I-V) characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field (PCF) scattering exhibits a significant impact on RS at the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.
Keywords:  AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs)      parasitic source resistance      polarization Coulomb field scattering  
Received:  14 January 2017      Revised:  23 April 2017      Accepted manuscript online: 
PACS:  71.55.Eq (III-V semiconductors)  
  73.40.Cg (Contact resistance, contact potential)  
  51.50.+v (Electrical properties)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182, 11574182, and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110131110005).
Corresponding Authors:  Zhao-Jun Lin     E-mail:  linzj@sdu.edu.cn

Cite this article: 

Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭) Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 2017 Chin. Phys. B 26 097104

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