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Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device |
| Yong-Chen Xiong(熊永臣)1,2, Jun Zhang(张俊)1, Wang-Huai Zhou(周望怀)1, Amel Laref1,3 |
1 School of Science, and Advanced Functional Material and Photoelectric Technology Research Institution, Hubei University of Automotive Technology, Shiyan 442002, China;
2 Department of Physics, Faculty of Science, National University of Singapore, Singapore 117551, Singapore;
3 Department of Physics and Astronomy, Science Faculty, King Saud University, Riyadh 11451, Saudi Arabia |
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Abstract The transport property and phase transition for a parallel triple dot device are studied by adopting Wilson's numerical renormalization group technique, focusing on the effects of level spacings between neighboring dot sites. By keeping dot 2 at the half-filled level and tuning the level differences, it is demonstrated that the system transits from local spin quadruplet to triplet and doublet sequently, and three kinds of Kondo peaks at the Fermi surface could be found, which are separated by two Kosterlitz-Thouless type quantum phase transitions and correspond to spin-3/2, spin-1, and spin-1/2 Kondo effect, respectively. To obtain a detailed understanding of these problems, the charge occupation, the spin-spin correlation, the transmission coefficient, and the temperature-dependent magnetic moment are shown, and necessary physical arguments are given.
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Received: 02 May 2017
Accepted manuscript online:
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PACS:
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71.27.+a
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(Strongly correlated electron systems; heavy fermions)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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85.35.-p
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(Nanoelectronic devices)
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73.21.-b
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(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11504102), the Scientific Research Items Foundation of Hubei Educational Committee, China (Grant Nos. Q20161803 and B2016091), the Doctoral Scientific Research Foundation (Grant No. BK201407), and the Major Scientific Research Project Pre-funds of Hubei University of Automotive Technology, China (Grant No. 2014XY06). |
Corresponding Authors:
Yong-Chen Xiong
E-mail: xiongyc_lx@huat.edu.cn
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Cite this article:
Yong-Chen Xiong(熊永臣), Jun Zhang(张俊), Wang-Huai Zhou(周望怀), Amel Laref Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device 2017 Chin. Phys. B 26 097102
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