Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

doi:10.1088/1674-1056/26/8/087501

Abstract

The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories (MRAMs) with 0.13 μm and 0.18-μm complementary metal-oxide-semiconductor (CMOS) process respectively and different magnetic tunneling junctions (MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad (Si) in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.

Keywords: magnetoresistive random-access memories total ionizing dose effect magnetic tunneling junction magnetic Compton scattering effect

Received: 10 March 2017
Revised: 13 April 2017
Accepted manuscript online:

PACS:	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)
	61.80.Ed	(γ-ray effects)
	33.57.+c	(Magneto-optical and electro-optical spectra and effects)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 61404161).

Corresponding Authors: Jia-Jun Luo
E-mail: luojj@ime.ac.cn

About author: 0.1088/1674-1056/26/8/

Cite this article:

Yan Cui(崔岩), Ling Yang(杨玲), Teng Gao(高腾), Bo Li(李博), Jia-Jun Luo(罗家俊) Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices 2017 Chin. Phys. B 26 087501

[1]	Bi J S, Liu G, Luo J J and Han Z S 2013 Acta Phys. Sin. 62 208501 (in Chinese)
[2]	Zhao X, Mei B, Bi J S, Zheng Z S, Gao L C, X Zeng C B, Luo J J, Yu F and Han Z S 2015 Acta Phys. Sin. 64 136102 (in Chinese)
[3]	Zhang J W, Yin C, Song C, Liu R T and Li B 2017 IEEE Trans. Dielectr. Electr. Insul. 24 791
[4]	Zhang J W, Yin C, Liu R and Zhao Y S 2016 Emerg. Mater. Res. 5 189
[5]	Zhang J W, Chen X, Belouadah R, Zhou T C, Yin C, Shi Y T and Niu Y Z 2015 Mater. Res. Innovations 19 305
[6]	He C H and Li Y Y 2007 Chin. Phys. 16 2773
[7]	Pan X Y, Guo H X, Luo Y H, Zhang F Q, Ding L L, Wei J N and Zhao W 2017 Chin. Phys. B 26 018501
[8]	Makarov A, Windbacher T, Sverdlov V and Selberherr S 2016 Semicond. Sci. Technol. 31 113006
[9]	Heidecker J, Allen G and Sheldon D 2010 IEEE Radiation Effects Data Workshop p. 4
[10]	Gerardin S and Paccagnella A 2010 IEEE Trans. Nucl. Sci. 57 3016
[11]	Tehrani S, Slaughter J M, Deherrera M, Engel B N, Rizzo N D, Salter J, Durlam M, W. Dave R W, Janesky J, Butcher B, Smith K and Grynkewich G 2003 Proc. IEEE 91 703
[12]	Durlam M, Addie D, Akerman J, Butcher B, Brown P, Chan J, DeHerrera M, Engel B N, Feil B, Grynkewich G, Janesky J, Johnson M, Kyler K, Molla J, Martin J, Nagel K, Ren J, Rizzo N D, Rodriguez T, Savtchenko L, Salter J, Slaughter J M, Smith K, Sun J J, Lien M, Papworth K, Shah P, Qin W, Williams R, Wise L and Tehrani S 2003 IEEE International Electron Devices Meeting, December 8-10, 2003 Washington, USA, p. 995
[13]	Nahas J J, Andre T W, Garni B, Subramanian C, Lin H, Alam S M, Papworth K and Martino W L 2008 J. Solid-ST. Circ. 43 1972
[14]	Slaughter J M, Rizzo N D, Mancoff F B, Whig R, Smith K, Aggarwal S and Tehrani S 2010 J. Magn. Soc. Jpn. 5 171
[15]	Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F and Ohno H 2008 Appl. Phys. Lett. 93 082508
[16]	Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan H D, Endo M, Kanai S, Hayakawa J, Matsukura F and Ohno H 2010 Nat. Mater. 9 721
[17]	Kobayashi D, Kakehashi Y, Hirose K, Onoda S, Makino T, Ohshima T, Ikeda S, Yamanouchi M, Sato H, Enobio E C, Endoh T and Ohno H 2014 IEEE Trans. Nucl. Sci. 61 1710
[18]	Hughes H, Bussmann K, McMarr P J, Cheng S F, Shull R, Chen A P, Schäfer S, Mewes T, Ong A, Chen E, Mendenhall M H and Reed A 2012 IEEE Trans. Nucl. Sci. 59 3027
[19]	Ren F H, Jander A, Dhagat P and Nordman C 2012 IEEE Trans. Nucl. Sci. 59 3034
[20]	Nguyen D N and Irom F 2007 Radiation and its Effects on Components and Systems Conference, September 10-14, 2007, Deauville, France, p. 628
[21]	Zhang H H, Bi J S, Duan Y, Xu Y N and Liu M 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology, October 25-28, 2016, Hangzhou, China, p. 72
[22]	Apalkov D, Dieny B and Slaughter J M 2016 Proc. IEEE 104 1796
[23]	Fong X Y, Kim Y S, Yogendra K, Fan D L, Sengupta A, Raghunathan A and Roy K 2016 IEEE Trans. Comput. Design Integr. Circuits Syst. 35 1
[24]	Ju H L, Li B H, Wu Z F, Zhang F, Liu S and Yu G H 2015 Acta Phys. Sin. 64 097501 (in Chinese)
[25]	Cardoso S, Ferreira R and Freitas P P 2000 Appl. Phys. Lett. 76 3729
[26]	Fukumoto Y, Shimura K, Kamijo A and Tahara S 2004 Appl Phys. Lett. 84 233
[27]	Yang E, Sokalski V M, Moneck M T, Bromberg D M and Zhu J G 2013 Appl. Phys. Lett. 113 17C116
[28]	Davisson C M 1968 Alpha-, Beta- and Gamma-Ray Spectroscopy (Amsterdam, New York, Oxford: Elsevier North-Holland Publishing Company) pp. 37-78
[29]	Tschentscher T, McCarthy J E, Honkimakia V and Suortti P 1998 J. Synchrotron Rad. 5 940
[30]	Ahuja B L, Dashora A, Heda N L, Tiwari S, Rajeevan N E, Itou M, Sakurai Y and Kumar R 2010 Appl. Phys. Lett. 97 212502

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Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

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