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Chin. Phys. B, 2017, Vol. 26(7): 074209    DOI: 10.1088/1674-1056/26/7/074209

Stable single-mode operation of 894.6 nm VCSEL at high temperatures for Cs atomic sensing

Lei Xiang(向磊)1,2, Xing Zhang(张星)1, Jian-Wei Zhang(张建伟)1, Yong-Qiang Ning(宁永强)1, Werner Hofmann3, Li-Jun Wang(王立军)1
1 Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2 University of Chinese Academy of Sciences, Beijing 100039, China;
3 Technical University of Berlin, Berlin, Germany

In this paper, stable single-mode operation at high temperatures is produced by the surface-relief-integrated vertical cavity surface emitting laser (VCSEL). The gain-cavity mode detuning technique is employed to realize high operating temperatures for the VCSEL. The surface relief is etched in the centre of the top side as a mode discriminator for the fundamental mode output, and the threshold current minimum is 1.94 mA at high temperatures by the gain-cavity mode detuning technique. Maximum single-fundamental-mode output power of 0.45 mW at 80℃ is obtained, and the side mode suppression ratios (SMSRs) are more than 30 dB with increasing temperature and current, respectively.

Keywords:  single-mode operation      surface relief      gain-cavity mode detuning      vertical cavity surface emitting laser (VCSEL)  
Received:  21 February 2017      Revised:  21 March 2017      Published:  05 July 2017
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation)  
  42.62.Fi (Laser spectroscopy)  

Project supported by the National Natural Science Foundation of China (Grant Nos.61434005,61474118,11674314,51672264,and 11404326),the Science and Technology Program of Jilin Province,China (Grant No.20150203011GX),the Science and Technology Program of Changchun City,China (Grant No.15SS02),and the Youth Innovation Promotion Association of China (Grant No.2017260).

Corresponding Authors:  Xing Zhang     E-mail:

Cite this article: 

Lei Xiang(向磊), Xing Zhang(张星), Jian-Wei Zhang(张建伟), Yong-Qiang Ning(宁永强), Werner Hofmann, Li-Jun Wang(王立军) Stable single-mode operation of 894.6 nm VCSEL at high temperatures for Cs atomic sensing 2017 Chin. Phys. B 26 074209

[1] Zhao Z B, Xu C, Xie Y Y, Zhou K, Liu F and Shen G D 2012 Chin. Phys. B 21 232
[2] Alsamaneh A and Michalzik R 2010 Proc. SPIE 7720
[3] Gruet F, Al-Samaneh A, Kroemer E, Bimboes L, Miletic D, Affolderbach C, Wahl D, Boudot R, Mileti G and Michalzik R 2013 Opt. Express 21 5781
[4] Zhang X, Zhang Y, Zhang J W, Zhang J, Zhong C Y, Huang Y W, Ning Y Q, Gu S H and Wang L J 2016 Acta. Phys. Sin. 65 134204 (in Chinese)
[5] Zhang J, Zhang X, Zhu H, Zhang J, Ning Y, Qin L and Wang L 2015 Opt. Express 23 14763
[6] Ueki N, Sakamoto A, Nakamura T, Nakayama H, Sakurai J, Otoma H, Miyamoto Y, Yoshikawa M and Fuse M 1999 IEEE Photon. Technol. Lett. 11 1539
[7] Jung C, Jager R, Grabherr M, Schnitzer P, Michalzik R, Weigl B, Muller S and Ebeling K J 1997 Electron. Lett. 33 1790
[8] Martinsson H, Vukusic J A, Ghisoni M, Grabherr M, Michalzik R, Jager R, Ebeling K J and Larsson A 1999 Photon. Technol. Lett. 11 1536
[9] Young E W, Choquette K D, Chuang S L and Geib K M 2001 IEEE Photon. Technol. Lett. 13 927
[10] Riechert H, Ramakrishnan A and Steinle G 2002 Semicond. Sci. Tech. 17 892
[11] Morgan R A, Guth G D, Focht M W, Asom M T, Kojima K, Rogers L E and Callis S E 1993 IEEE Photon. Technol. Lett. 5 374
[12] Danner A J, Kim T S and Choquette K D 2005 Electron. Lett. 41 325
[13] Xie Y Y, Kan Q, Xu C, Zhu Y X, Wang C X and Chen H D 2012 IEEE Photon. Technol. Lett. 24 464
[14] Furukawa A, Sasaki S, Hoshi M, Matsuzono A, Moritoh K and Baba T 2004 Appl. Phys. Lett. 85 5161
[15] Furukawa A, Hoshi M, Sasaki S, Matsuzono A, Moritoh K and Baba T 2005 Proc. SPIE 183 5722
[16] Wei S M, Xu C, Deng J, Zhu Y X, Mao M M, Xie Y Y, Xu K, Cao T and Liu J C 2012 Chin. Phys. Lett. 29 084208
[17] Michalzik R 2013 VCSELs Fundamentals (Berlin:Springer) p. 44
[18] Weigl B, Grabherr M, Jung C and Jager R 1997 IEEE J. Sel. Top Quant. 3 409
[19] Derebezov I A, Haisler V A, Bakarov A K, Kalagin A K, Toropov A I, Kachanova M M, Gavrilova T A, Semenova O I, Tretyakov D B and Beterov I I 2010 Semiconductors 44 1422
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