Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction

doi:10.1088/1674-1056/26/1/018504

Abstract A Si/Ge heterojunction line tunnel field-effect transistor (LTFET) with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.

Keywords: line tunnel field-effect transistor heteromaterial gate fully depleted

Received: 22 June 2016
Revised: 21 October 2016
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	85.35.-p	(Nanoelectronic devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61306105), the National Science and Technology Major Project of China (Grant No. 2011ZX02708-002), the Tsinghua University Initiative Scientific Research Program and the Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline Foundation of China.

Corresponding Authors: Renrong Liang
E-mail: liangrr@mail.tsinghua.edu.cn

Cite this article:

Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军) Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction 2017 Chin. Phys. B 26 018504

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Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction

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