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Chin. Phys. B, 2016, Vol. 25(7): 078501    DOI: 10.1088/1674-1056/25/7/078501

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊)
Key Laboratory of Silicon Device and Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.
Keywords:  cryogenic temperature      metal-oxide-semiconductor      silicon-on-insulator      capacitance  
Received:  28 December 2015      Revised:  02 March 2016      Published:  05 July 2016
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  07.20.Mc (Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176095 and 61404169) and the Youth Innovation Promotion Association of Chinese Academy of Sciences.
Corresponding Authors:  Jiajun Luo     E-mail:

Cite this article: 

Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊) Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices 2016 Chin. Phys. B 25 078501

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