| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices |
| Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊) |
| Key Laboratory of Silicon Device and Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.
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Received: 28 December 2015
Revised: 02 March 2016
Published: 05 July 2016
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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07.20.Mc
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(Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176095 and 61404169) and the Youth Innovation Promotion Association of Chinese Academy of Sciences. |
Corresponding Authors:
Jiajun Luo
E-mail: luojj@ime.ac.cn
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Cite this article:
Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊) Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices 2016 Chin. Phys. B 25 078501
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