Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

doi:10.1088/1674-1056/25/7/078501

Abstract The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.

Keywords: cryogenic temperature metal-oxide-semiconductor silicon-on-insulator capacitance

Received: 28 December 2015
Revised: 02 March 2016
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	07.20.Mc	(Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176095 and 61404169) and the Youth Innovation Promotion Association of Chinese Academy of Sciences.

Corresponding Authors: Jiajun Luo
E-mail: luojj@ime.ac.cn

Cite this article:

Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊) Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices 2016 Chin. Phys. B 25 078501

[1]	Elbuluk M, Hammoud A and Patterson R 2005 IEEE 36th Power Electronics Specialists Conference, June 16, 2005, USA, p. 1156
[2]	Chen T, Zhu C, Najafizadeh L, Jun ongim, Ahmed dnan, Diestelhorst yan, Espinel G and Cressler J D 2006 Solid-State Electron. 50 959
[3]	Venkataraman S, Banerjee B, Chang-Ho L, Laskar J and Cressler J D 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Jan 10-12, 2007, Long Beach, USA, p. 52
[4]	Wada T, Nagata H, Ikeda H, Arai Y, Ohno M and Nagase K 2012 Journal of Low Temperature Physics 167 602
[5]	Zhao X, Mei B Bi J S, Zheng Z S, Gao L C, Zeng C B, Luo J J, Yu F and Han Z S 2015 Acta Phys. Sin. 64 294 (in Chinese)
[6]	Lu K, Chen J, Luo J X, He W W, Huang J Q, Chai Z and Wang X 2015 Chin. Phys. B 24 088501
[7]	Zhou H, Cui J W, Zheng Q W, Guo Q, Ren D Y and Yu X F 2015 Acta Phys. Sin. 64 086101 (in Chinese)
[8]	Gaensslen F, Rideout V, Walker E and Walker J 1977 IEEE Electron Dev. 24 218
[9]	Ghibaudo G and Balestra F 1996 Journal de Physics IV 6 C3-3
[10]	Clark W F, El-Kareh B, Pires R G, Titcomb S L and Anderson R L 1992 IEEE T. Compon. Hybr. 15 197
[11]	Jason W and James P 1986 IEEE Electron Dev. 33 1012
[12]	Sai-Halasz G, Wordeman M, Kern P, Ganin E, Rishton S, Zicherman D, Schmid H, Polcari R, Ng H, Restle P, Chang T and Dennard R 1987 IEEE Electron Dev. Lett. 8 563
[13]	Hoff J, Deptuch G, Wu G Y and Gui P 2015 IEEE T. Nucl. Sci. 62 1255
[14]	Young K and Tsaur Y 1990 IEEE Electron Dev. Lett. 11 126
[15]	Elewa T, Balestra F, Cristoloveanu S, Hafez M, Colinge J, Auberton-Herve J and Davis R 1990 IEEE Electron Dev. 37 1007
[16]	Shin M, Shi M, Mouis M, Cros A, Josse E, Kim T and Ghibaudo G 2014 15th International Conference on Ultimate Integration on Silicon (Ulis), p. 61
[17]	Claeys C and Simoen E 1994 Electron. Lett. 30 454
[18]	Creten Y, Merken P, Sansen W, Mertens P and Van Hoof C 2009 IEEE J. Solid-St. Circ. 44 2019
[19]	Seung-Ho H, Gil-Bok C, Rock-Hyun B, Hee-Sung K, Sung-Woo J and Yoon-Ha J 2008 IEEE Electron Dev. Lett. 29 775
[20]	Das K and Lehmann T 2014 Cryogenics 62 84
[21]	de Souza M, Pavanello A, Martino A, Simoen E and Claeys C 2007 IEEE International Soi Conference Proceedings 37
[22]	Damiano J and Franzon P D 2004 IEEE International SOI Conference, Oct. 4-7, 2004, Charleston, USA, p. 115
[23]	Prijie Z D, Dimitrijev S S and Stojadinovie N D 1992 Microelectronics Reliability 32 769
[24]	Das K and Lehmann T 2010 IEEE International Symposium on Circuits and Systems (ISCAS), May 30-June 2, 2010, Paris, France, p. 3405
[25]	Nicollian E H and Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (New York: Wiley) pp. 224-227
[26]	Sze S M and Kwok K 2006 Physics of Semiconductor Devices, 2nd edn. (New York: Wiley) pp. 374-413
[27]	Ghazavi P and Fat D H 1995 IEEE Electron Dev. Lett. 42 123
[28]	Cheng-Linag H and Gildenblat G S 1989 IEEE Electron Dev. Lett. 36 1434
[29]	Gaensslen F H and Jaeger R C 1979 Solid-State Electronics 22 423
[30]	McKelvey 1984 Solid State and Semiconductor Physics (New York: Dover) ch. 9

[1]	High performance carrier stored trench bipolar transistor with dual shielding structure Jin-Ping Zhang(张金平), Hao-Nan Deng(邓浩楠), Rong-Rong Zhu(朱镕镕), Ze-Hong Li(李泽宏), and Bo Zhang(张波). Chin. Phys. B, 2023, 32(3): 038501.
[2]	Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[3]	High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波). Chin. Phys. B, 2023, 32(1): 017305.
[4]	MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation Bing Zhang(张冰), Congzhen Hu(胡从振), Youze Xin(辛有泽), Yaoxin Li(李垚鑫), Zhuoqi Guo(郭卓奇), Zhongming Xue(薛仲明), Li Dong(董力), Shanzhe Yu(于善哲), Xiaofei Wang(王晓飞), Shuyu Lei(雷述宇), and Li Geng(耿莉). Chin. Phys. B, 2022, 31(5): 058503.
[5]	Impact of STI indium implantation on reliability of gate oxide Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Chin. Phys. B, 2022, 31(2): 028505.
[6]	Accurate capacitance-voltage characterization of organic thin films with current injection Ming Chu(褚明), Shao-Bo Liu(刘少博), An-Ran Yu(蔚安然), Hao-Miao Yu(于浩淼), Jia-Jun Qin(秦佳俊), Rui-Chen Yi(衣睿宸), Yuan Pei(裴远), Chun-Qin Zhu(朱春琴), Guang-Rui Zhu(朱光瑞), Qi Zeng(曾琪), and Xiao-Yuan Hou(侯晓远). Chin. Phys. B, 2021, 30(8): 087301.
[7]	Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO₂ ferroelectric capacitors Yuan-Yuan Zhang(张元元), Xiao-Qing Sun(孙晓清), Jun-Shuai Chai(柴俊帅), Hao Xu(徐昊), Xue-Li Ma(马雪丽), Jin-Juan Xiang(项金娟), Kai Han(韩锴), Xiao-Lei Wang(王晓磊), and Wen-Wu Wang(王文武). Chin. Phys. B, 2021, 30(12): 127701.
[8]	Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智). Chin. Phys. B, 2021, 30(1): 018501.
[9]	Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs Xian-Le Zhang(张先乐), Peng-Ying Chang(常鹏鹰), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦). Chin. Phys. B, 2020, 29(3): 038505.
[10]	Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣). Chin. Phys. B, 2020, 29(2): 028501.
[11]	Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南). Chin. Phys. B, 2019, 28(5): 058503.
[12]	Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园). Chin. Phys. B, 2019, 28(3): 037201.
[13]	High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Chin. Phys. B, 2019, 28(1): 018102.
[14]	How to characterize capacitance of organic optoelectronic devices accurately Hao-Miao Yu(于浩淼), Yun He(何鋆). Chin. Phys. B, 2018, 27(6): 067202.
[15]	Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors Su-Zhen Luan(栾苏珍), Yu-Cheng Wang(汪钰成), Yin-Tao Liu(刘银涛), Ren-Xu Jia(贾仁需). Chin. Phys. B, 2018, 27(4): 047208.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

Cite this article:

Online attention