| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology |
| Ou-Peng Li(李欧鹏)1, Yong Zhang(张勇)1, Rui-Min Xu(徐锐敏)1, Wei Cheng(程伟)2, Yuan Wang(王元)2, Bing Niu(牛斌)2, Hai-Yan Lu(陆海燕)2 |
1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu 611731, China;
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China |
|
|
|
|
Abstract Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.
|
Received: 14 December 2015
Revised: 18 January 2016
Accepted manuscript online:
|
|
PACS:
|
84.30.Le
|
(Amplifiers)
|
| |
07.57.-c
|
(Infrared, submillimeter wave, microwave and radiowave instruments and equipment)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020). |
Corresponding Authors:
Ou-Peng Li
E-mail: lopuestc@gmail.com
|
Cite this article:
Ou-Peng Li(李欧鹏), Yong Zhang(张勇), Rui-Min Xu(徐锐敏), Wei Cheng(程伟), Yuan Wang(王元), Bing Niu(牛斌), Hai-Yan Lu(陆海燕) A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology 2016 Chin. Phys. B 25 058401
|
| [1] |
Yin H R, Gong Y B, Wei Y Y, Gong H R, Yue L N, Lu Z G, Huang M Z and Wang W X 2007 Chin. Phys. B 16 2737
|
| [2] |
Yao C, Xu T H, Wan W J, Zhu Y H and Cao J C 2015 Chin. Phys. B 24 094208
|
| [3] |
Qi C C, Zuo D L, Lu Y Z, Tang J, Yang C G, Ke L D and Cheng Z H 2009 Chin. Phys. Lett. 26 124201
|
| [4] |
Qi C C, Zuo D L, Lu Y Z, Tang J and Cheng Z H 2010 Chin. Phys. Lett. 27 038401
|
| [5] |
Tu X C, Kang L, Liu X H, Mao Q K, Wan C, Chen J, Jin B B, Ji Z M, Xu W W and Wu P H 2013 Chin. Phys. B 22 040701
|
| [6] |
Ren T H, Zhang Y, Yan B, Xu R M, Yang C Y, Zhou J T and Jin Z 2015 Chin. Phys. Lett. 32 20702
|
| [7] |
Samoska L A 2011 IEEE Trans. Terahertz Sci. Technol. 1 9
|
| [8] |
Urteaga M, Seo M, Hacker J, Griffith Z, Young A, Pierson R, Rowell P, Skalare A and Rodwell M J W International Conference on Indium Phosphide and Related Materials, May 22-26, 2011, p. 1
|
| [9] |
Eriksson K, Gunnarsson S E, Vassilev V and Zirath H 2014 IEEE Trans. Terahertz Sci. Technol. 4 56
|
| [10] |
Kim J, Jeon S, Kim M, Urteaga M and Jeong J 2015 IEEE Trans. Terahertz Sci. Technol. 5 215
|
| [11] |
Radisic V, Scott D, Sujane W, Cavus A, Gutierrez A A and Deal W R 2011 IEEE Microw. Wirel. Co. 21 335
|
| [12] |
Reed T B, Rodwell M, Griffith Z, Rowell P, Young A, Urteaga M and Field M 2012 International Conference on Indium Phosphide and Related Materials, October 14-17, 2012, p. 1
|
| [13] |
Niu B, Wang Y, Cheng W, Xie Z L, Lu H Y, Sun Y, Xie J L and Chen T S 2015 Micow. Opt. Technol. Lett. 57 2774
|
| [14] |
Cheng W, Jin Z, Yu J Y and Liu X Y 2007 Chin. J. Semicond. 28 943
|
| [15] |
Liu H G, Jin Z, Su Y B, Wang X T, Chang H D, Zhou L, Liu X Y and Wu D X 2010 Chin. Phys. Lett. 27 058502
|
| [16] |
Hacker J B, Ha W, Hillman C, Urteaga M, Pierson R and Brar B 2007 IEEE/MTT-S International Microwave Symposium, June 3-8, 2007, Honolulu HI, p. 805
|
| [17] |
Matsumura H, Shiba S, Sato M and Takahashi T International Conference on Indium Phosphide and Related Materials, May 19-23, 2013, Kobe, p. 1
|
| [18] |
Li O P, Wang L, Cheng W, Lu H Y, Gu G H, Zhang J and Xu R M Asia-Pacific Microwave Conference, November 4-7, 2014, Sendai, p. 765
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
