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Chin. Phys. B, 2016, Vol. 25(3): 038503    DOI: 10.1088/1674-1056/25/3/038503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Liuan Li(李柳暗)1, Jiaqi Zhang(张家琦)2, Yang Liu(刘扬)1, Jin-Ping Ao(敖金平)2
1. School of Microelectronics, Sun Yat-Sen University, Guangzhou 510275, China;
2. Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan
Abstract  In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω· mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs.
Keywords:  metal-oxide-semiconductor heterostructure field-effect transistors      low temperature ohmic process      inductively coupled plasma  
Received:  14 June 2015      Revised:  11 November 2015      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.61.Ey (III-V semiconductors)  
  81.15.Cd (Deposition by sputtering)  
Fund: Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).
Corresponding Authors:  Yang Liu, Jin-Ping Ao     E-mail:  liuy69@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp

Cite this article: 

Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平) Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature 2016 Chin. Phys. B 25 038503

[1] Keller S, Wu Y F, Parish G, Zhang N, Xu J J, Keller B P, DenBaars S P and Mishra U K 2001 IEEE Trans. Electron Devices 48 552
[2] Mishra U K, Shen L, Kazior T E and Wu Y F 2008 Proc. IEEE 96 287
[3] Li L, Nakamura R, Wang Q, Jiang Y and Ao J P 2014 Nanoscale Res. Lett. 9 590
[4] Li L, Kishi A, Shiraishi T, Jiang Y, Wang Q, Ao J P and Ohno Y 2013 Jpn. J. Appl. Phys. 52 11NH01
[5] Li L, Xu Y, Wang Q, Nakamura R, Jiang Y and Ao J P 2015 Semicond. Sci. Technol. 30 015019
[6] Nakano T, Chiba M and Akazawa M 2014 Jpn. J. Appl. Phys. 53 04EF06
[7] Wang Q, Jiang Y, Zhang J, Li L, Kawaharada K, Wang D and Ao J P 2015 Appl. Phys. Express 8 046501
[8] Apajna M and Kuzmík J 2012 Appl. Phys. Lett. 100 113509
[9] Kang H S, Pratap R M, Kim D S, Kim K W, Ha J B, Lee Y S, Choi H C and Lee J H 2013 J. Phys. D: Appl. Phys. 46 155101
[10] Pavunny S P, Misra P, Thomas R, Kumar A, Schubert J, Scott J F and Katiyar R S 2013 Appl. Phys. Lett. 102 192904
[11] Yan D, Lu H, Cao D, Chen D, Zhang R and Zheng Y 2010 Appl. Phys. Lett. 97 153503
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